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2SK2007 Hitachi Semiconductor Silicon N-Channel MOS FET Datasheet


Hitachi Semiconductor
2SK2007
Part Number 2SK2007
Manufacturer Hitachi Semiconductor
Description 2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Sou...
Features




• Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2007 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 20 80 20 100...

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