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2SJ496 Hitachi Semiconductor P-Channel MOSFET Datasheet


Hitachi Semiconductor
2SJ496
Part Number 2SJ496
Manufacturer Hitachi Semiconductor
Description 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ496...
Features
• Low on-resistance R DS(on) = 0.12Ω typ. (at VGS =
  –10 V, I D =
  –2.5 A)
• 4V gate drive devices.
• Large current capacitance ID =
  –5 A Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ496 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I A...

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