logo

2SJ362 Sanyo Semicon Device P-Channel MOSFET Datasheet

ERG-2SJ362V


Sanyo Semicon Device
2SJ362
Part Number 2SJ362
Manufacturer Sanyo Semicon Device
Description Ordering number:EN4918 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ362 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SJ362] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 ...
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive. P-Channel Silicon MOSFET 2SJ362 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SJ362] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP [2SJ362] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications t...

Document Datasheet 2SJ362 datasheet pdf (90.32KB)
Distributor Distributor
Bristol Electronics
Stock 995 In Stock
Price
446 units: 0.0675 USD
68 units: 0.1125 USD
23 units: 0.225 USD
BuyNow BuyNow BuyNow (Manufacturer a Panasonic Electronic Components)




2SJ362 Distributor

part
Panasonic Electronic Components
ERG-2SJ362
스루홀 저항기 3.6 kOhms ±5% 2W 난연성, 안전 금속 산화물 필름 축방향
500 units: 103.396 KRW
250 units: 125.38 KRW
100 units: 143.82 KRW
50 units: 206.86 KRW
25 units: 280.4 KRW
10 units: 360.6 KRW
1 units: 534 KRW
Distributor
DigiKey

742 In Stock
BuyNow BuyNow
part
Panasonic Electronic Components
ERG-2SJ362V
446 units: 0.0675 USD
68 units: 0.1125 USD
23 units: 0.225 USD
Distributor
Bristol Electronics

995 In Stock
BuyNow BuyNow





2SJ362 Similar Datasheet

Part Number Description
2SJ302
manufacturer
NEC
P-Channel MOSFET
...
2SJ302-Z
manufacturer
NEC
SWITCHING P-CHANNEL POWER MOSFET
...
2SJ302-ZJ
manufacturer
Kexin
P-Channel MOSFET
SMD Type P-Channel MOSFET 2SJ302-ZJ ■ Features ● VDS (V) =-60V ● ID =-16 A ● RDS(ON) < 100mΩ (VGS =-10V) ● RDS(ON) < 240mΩ (VGS =-4V) MOSFET ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Tc = 25℃ Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10us,Duty Cycle ≤ 1% Symbol VDS VGS ID IDM PD TJ Tstg Rating -60 -20,+10 -16 -64 75 150 -55 to 150 Unit V A W ℃ www.kexin.com.cn 1 SMD Type P-Channel MOSFET 2SJ302-ZJ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS...
2SJ303
manufacturer
NEC
P-Channel MOSFET
...
2SJ304
manufacturer
Toshiba Semiconductor
P-Channel MOSFET
2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse(Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range V...
2SJ305
manufacturer
Toshiba Semiconductor
P-Channel MOSFET
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance • Low gate threshold voltage.: Vth = −0.5 to −1.5 V • Excellent switching times.: ton = 0.06 μs (typ.) toff = 0.15 μs (typ.) • Low drain-source ON resistance: RDS (ON) = 2.4 Ω (typ.) • Small package. • Complementary to 2SK2009 2SJ305 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range VDS VGSS ID PD Tch Tstg −30 V ±20 V −200 mA 200 mW 150 °C −55 to 150 °C JEDEC TO-236MOD JEI...
2SJ3053DV
manufacturer
Kexin
P-Channel MOSFET
SMD Type MOSFET P Channel MOSFET 2SJ3053DV ■ Features ● Surface Mount Package ● Super High Density Cell Design for Extremely Low RDS(on) ● Exceptional On-resistance and Maximum DC Current Capability ( SOT-23-6 ) 0.4+0.1 -0.1 6 54 1 23 +0.01 -0.01 +0.2 -0.1 +0.21.6 -0.1 +0.22.8 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.11.1 -0.1 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings (Ta = 25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (tp=10us) Power Dissipation Thermal Resistancefrom Junction- to-Ambient (Note 1) Junction Temperature Junction Storage ...
2SJ306
manufacturer
Sanyo Semicon Device
P-Channel MOSFET
Ordering number:EN4316 P-Channel Silicon MOSFET 2SJ306 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ306] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SA...
2SJ307
manufacturer
Sanyo Semicon Device
P-Channel MOSFET
Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ307] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle...
2SJ308
manufacturer
Sanyo Semicon Device
P-Channel MOSFET
Ordering number:EN4318 P-Channel Silicon MOSFET 2SJ308 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ308] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SA...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy