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2SJ361 Hitachi Semiconductor P-Channel MOSFET Datasheet

ERG-2SJ361 Res Metal Oxide Film 360 Ohm 5% 2W ±350ppm/°C Conformal Coated AXL Bulk


Hitachi Semiconductor
2SJ361
Part Number 2SJ361
Manufacturer Hitachi Semiconductor
Description 2SJ361 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ361 Absolute Maximum Rating...
Features



• Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ361 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings
  –20 ±20
  –2
  –4
  –2 1 150
  –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alum...

Document Datasheet 2SJ361 datasheet pdf (43.09KB)
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