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2SJ130L Hitachi Semiconductor P-Channel MOSFET Datasheet

2SJ130LE SILICON P CHANNEL MOS FET Power Field-Effect Transistor, 1A I(D), 300V, 8.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET


Hitachi Semiconductor
2SJ130L
Part Number 2SJ130L
Manufacturer Hitachi Semiconductor
Description 2SJ130(L), 2SJ130(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline DPAK-1 4 4 1 1 D G 1...
Features




• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ130(L), 2SJ130(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg 1 Ratings
  –300 ±20
  –1
  –2...

Document Datasheet 2SJ130L datasheet pdf (48.30KB)
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2SJ130L Distributor

part
Renesas Electronics Corporation
2SJ130LE
SILICON P CHANNEL MOS FET Power Field-Effect Transistor, 1A I(D), 300V, 8.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
No price available
Distributor
ComSIT Asia

1932 In Stock
No Longer Stocked





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