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FDS3512 ON Semiconductor N-Channel MOSFET Datasheet

FDS3512 Small Signal Field-Effect Transistor, 4A, 80V, N-Channel, MOSFET


ON Semiconductor
FDS3512
FDS3512
Part Number FDS3512
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (13nC Typical) These M...
Features
• 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V
• Low gate charge (13nC Typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol V...

Document Datasheet FDS3512 datasheet pdf (178.50KB)
Distributor Distributor
Rochester Electronics
Stock 53998 In Stock
Price
1000 units: 1.09 USD
500 units: 1.16 USD
100 units: 1.21 USD
25 units: 1.26 USD
1 units: 1.29 USD
BuyNow BuyNow BuyNow (Manufacturer a Fairchild Semiconductor Corporation)




FDS3512 Distributor

part
onsemi
FDS3512
N채널 80V 4A(Ta) 2.5W(Ta) 표면 실장 8-SOIC
1000 units: 1800.619 KRW
500 units: 2122.148 KRW
100 units: 2508.04 KRW
10 units: 3150.4 KRW
1 units: 3794 KRW
Distributor
DigiKey

3894 In Stock
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part
Fairchild Semiconductor Corporation
FDS3512
Small Signal Field-Effect Transistor, 4A, 80V, N-Channel, MOSFET
1000 units: 1.09 USD
500 units: 1.16 USD
100 units: 1.21 USD
25 units: 1.26 USD
1 units: 1.29 USD
Distributor
Rochester Electronics

53998 In Stock
BuyNow BuyNow
part
FDS3512
INSTOCK
No price available
Distributor
Chip 1 Exchange

5010 In Stock
No Longer Stocked
part
onsemi
FDS3512
Trans MOSFET N-CH 80V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3512)
66000 units: 0.9424 USD
33000 units: 0.9728 USD
6600 units: 1.0032 USD
3300 units: 1.0336 USD
1400 units: 1.064 USD
660 units: 1.0944 USD
658 units: 1.1248 USD
Distributor
Avnet Americas

0 In Stock
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part
onsemi
FDS3512
Stock, ship today
1 units: 0.76 USD
Distributor
Flip Electronics

15000 In Stock
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FDS3512 Similar Datasheet

Part Number Description
FDS3512
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N-Channel MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (13nC Typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D ...
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This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • • • • 9 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V RDS(ON) = 0.022 Ω @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 7 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 8 Absolute Maximum Ratings Drain-...
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FDS3572 November 2003 FDS3572 N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A • Qg(tot) = 31nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Primary switch for Isolated DC/DC converters • Distributed Power and Intermediate Bus Architectures • High Voltage Synchronous Rectifier for DC Bus Converters Formerly developmental type 82663 Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Dra...
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MOSFET – N-Channel, POWERTRENCH) 80 V, 8.9 A, 16 mW FDS3572 Features • RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A • Qg(tot) = 31 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • Optimized Efficiency at High Frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free and Halide Free Applications • Primary Switch for Isolated DC−DC Converters • Distributed Power and Intermediate Bus Architectures • High Voltage Synchronous Rectifier for DC Bus Converters ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current A C...
FDS3580
manufacturer
Fairchild Semiconductor
N-Channel MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 7.6 A, 80 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.031 Ω @ VGS = 6 V. • • • • Low gate charge (34nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capabilit...
FDS3580
manufacturer
ON Semiconductor
N-Channel MOSFET
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC−DC power supply designs with higher overall efficiency. Features  7.6 A, 80 V:  RDS(ON) = 0.029 W @ VGS = 10 V  RDS(ON) = 0.033 W @ VGS = 6 V  Low Gate Charge (34 nC Typical)  Fast Switching Speed  High Performance Trench Technology for Extremely Low RDS(ON)  High Power and Current Handling Capability ...
FDS3590
manufacturer
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N-Channel MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 6.5 A, 80 V RDS(ON) = 39 mΩ @ VGS = 10 V RDS(ON) = 44 mΩ @ VGS = 6 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D SO-8 G S...




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