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FDC6401N ON Semiconductor Dual N-Channel MOSFET Datasheet

FDC6401N MOSFET - 어레이 2 N-Chan(이중) 20V 3A 700mW 표면 실장 SuperSOT™-6


ON Semiconductor
FDC6401N
Part Number FDC6401N
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description This Dual N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70...
Features
• 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V
• Low Gate Charge (3.3 nC)
• High Performance Trench Technology for Extremely Low RDS(ON)
• High Power and Current Handling Capability
• This is a Pb−Free and Halide Free Device Applications
• DC/DC Converter
• Battery Protection
• Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current −Continuous (Note 1a.) −Pulsed 20 V ±12 V A 3.0 12 PD Power Dissipation for Single Operation (Note ...

Document Datasheet FDC6401N datasheet pdf (327.88KB)
Distributor Distributor
DigiKey
Stock 9000 In Stock
Price
30000 units: 307.24823 KRW
9000 units: 310.32077 KRW
6000 units: 335.14584 KRW
3000 units: 353.76334 KRW
BuyNow BuyNow BuyNow (Manufacturer a onsemi)




FDC6401N Distributor

part
onsemi
FDC6401N
MOSFET, DUAL, N, SMD, SUPERSOT-6
1 units: 329 KRW
Distributor
element14 Asia-Pacific

4976 In Stock
BuyNow BuyNow
part
onsemi
FDC6401N
MOSFET - 어레이 2 N-Chan(이중) 20V 3A 700mW 표면 실장 SuperSOT™-6
30000 units: 307.24823 KRW
9000 units: 310.32077 KRW
6000 units: 335.14584 KRW
3000 units: 353.76334 KRW
Distributor
DigiKey

9000 In Stock
BuyNow BuyNow
part
onsemi
FDC6401N
Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R (Alt: FDC6401N)
150000 units: 0.20047 USD
75000 units: 0.2053 USD
30000 units: 0.21037 USD
15000 units: 0.2157 USD
9000 units: 0.21846 USD
6000 units: 0.2213 USD
3000 units: 0.22421 USD
Distributor
Avnet Asia

0 In Stock
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part
onsemi
FDC6401N
MOSFETs Dual N-Ch 2.5V Spec Power Trench
1 units: 0.65 USD
10 units: 0.559 USD
100 units: 0.388 USD
500 units: 0.324 USD
1000 units: 0.276 USD
3000 units: 0.245 USD
6000 units: 0.232 USD
9000 units: 0.215 USD
Distributor
Mouser Electronics

28112 In Stock
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part
onsemi
FDC6401N
Trans MOSFET N-CH 20V 3A 6-Pin TSOT-23 T/R
9000 units: 0.2098 USD
6000 units: 0.2241 USD
3000 units: 0.2407 USD
Distributor
Arrow Electronics

3000 In Stock
BuyNow BuyNow
part
onsemi
FDC6401N
MOSFET, Fairchild, FDC6401N, RL
12000 units: 1.962 HKD
6000 units: 2.002 HKD
3000 units: 2.043 HKD
Distributor
RS

7340 In Stock
BuyNow BuyNow
part
onsemi
FDC6401N
Trans MOSFET N-CH 20V 3A 6-Pin TSOT-23 T/R
9000 units: 0.2084 USD
6000 units: 0.2226 USD
3000 units: 0.2391 USD
Distributor
Verical

3000 In Stock
BuyNow BuyNow
part
onsemi
FDC6401N
Dual N-Channel 20 V 70 mOhm 2.5V Specified PowerTrench Mosfet SSOT-6
15000 units: 0.21 USD
12000 units: 0.215 USD
9000 units: 0.215 USD
6000 units: 0.22 USD
3000 units: 0.22 USD
Distributor
Future Electronics

75000 In Stock
BuyNow BuyNow
part
onsemi
FDC6401N
FDC6401N - Dual N-Channel, MOSFET - Power
1000 units: 0.2112 USD
500 units: 0.2236 USD
100 units: 0.2336 USD
25 units: 0.2435 USD
1 units: 0.2485 USD
Distributor
Rochester Electronics

5900 In Stock
BuyNow BuyNow
part
onsemi
FDC6401N
MOSFET Transistor, Matched Pair, N-Channel, TSOP
903 units: 0.198 USD
190 units: 0.2218 USD
1 units: 0.4752 USD
Distributor
Quest Components

1390 In Stock
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FDC6401N Similar Datasheet

Part Number Description
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Fairchild Semiconductor
Dual N-Channel 2.5V Specified PowerTrench MOSFET
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge (3.3 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter • Battery Protection • Power Management D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 TA=25 C unless otherwise noted o 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source...
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