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FDS6673BZ |
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| Part Number | FDS6673BZ |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management an... |
| Features |
• Max RDS(on) = 7.8 mW @ VGS = −10 V, ID = −14.5 A • Max RDS(on) = 12 mW @ VGS = −4.5 V, ID = −12 A • Extended VGS Range (−25 V) for Battery Applications • HBM ESD Protection Level of 6.5 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • Pb−Free, Halide Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed −30 V ±25 V A −14.5 −75 PD Maxim... |
| Document |
 FDS6673BZ Data Sheet
PDF 282.02KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDS6673BZ |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 2 | FDS6673BZ-F085 |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDS6673BZ_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET |
|
| 4 | FDS6673AZ |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 5 | FDS6670A |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDS6670AS |
Fairchild Semiconductor |
30V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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