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STPSC10H065G2 STMicroelectronics high surge silicon carbide power Schottky diode Datasheet

STPSC10H065G2-TR 다이오드 실리콘 카바이드 쇼트키 650V 10A 표면 실장 D²PAK


STMicroelectronics
STPSC10H065G2
Part Number STPSC10H065G2
Manufacturer STMicroelectronics (https://www.st.com/)
Description This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ri...
Features
• No or negligible reverse recovery
• Switching behavior independent of temperature
• High forward surge capability
• Operating Tj from -40 °C to 175 °C
• Power efficient product
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
• ECOPACK2 compliant component Applications
• Telecom power supply
• Server power supply
• Switch mode power supply
• DCDC converters
• LLC topologies Description This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode...

Document Datasheet STPSC10H065G2 datasheet pdf (377.74KB)
Distributor Distributor
DigiKey
Stock 1000 In Stock
Price
5000 units: 2337.8994 KRW
2000 units: 2436.839 KRW
1000 units: 2587.968 KRW
BuyNow BuyNow BuyNow (Manufacturer a STMicroelectronics)




STPSC10H065G2 Distributor

part
STMicroelectronics
STPSC10H065G2-TR
다이오드 실리콘 카바이드 쇼트키 650V 10A 표면 실장 D²PAK
5000 units: 2337.8994 KRW
2000 units: 2436.839 KRW
1000 units: 2587.968 KRW
Distributor
DigiKey

1000 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC10H065G2-TR
Schottky Diodes & Rectifiers 650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
1 units: 3.47 USD
10 units: 2.92 USD
100 units: 2.36 USD
250 units: 2.23 USD
500 units: 2.1 USD
1000 units: 2.09 USD
2000 units: 1.68 USD
Distributor
Mouser Electronics

1730 In Stock
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part
STMicroelectronics
STPSC10H065G2-TR
650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
1 units: 3.4 USD
10 units: 2.86 USD
100 units: 2.31 USD
250 units: 2.19 USD
500 units: 2.06 USD
Distributor
STMicroelectronics

1720 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC10H065G2-TR
Silicon Carbide Diodes,STPSC10H065G2, RL
500 units: 27.276 HKD
250 units: 28.118 HKD
100 units: 28.988 HKD
10 units: 29.884 HKD
Distributor
RS

185 In Stock
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part
STMicroelectronics
STPSC10H065G2-TR
Diode SiC Schottky 10A 3-Pin D2PAK T/R - Tape and Reel (Alt: STPSC10H065G2-TR)
100000 units: 1.69206 USD
10000 units: 1.73096 USD
8000 units: 1.76986 USD
6000 units: 1.80876 USD
4000 units: 1.84766 USD
2000 units: 1.88655 USD
1000 units: 1.92545 USD
Distributor
Avnet Americas

0 In Stock
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part
STMicroelectronics
STPSC10H065G2-TR
Diode SiC Schottky 10A 3-Pin D2PAK T/R (Alt: STPSC10H065G2-TR)
No price available
Distributor
Avnet Silica

1000 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC10H065G2-TR
Diode SiC Schottky 10A 3-Pin D2PAK T/R (Alt: STPSC10H065G2-TR)
No price available
Distributor
EBV Elektronik

0 In Stock
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STPSC10H065G2 Similar Datasheet

Part Number Description
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power Schottky silicon carbide diode
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. This STPSC10H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. DS9226 - Rev 8 - January 2020 For further information contact your lo...
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The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions. DS12496 - Rev 2 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com STPSC10H065BY-TR Characteristics 1 Characteristics Table 1. Absolute rat...
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power Schottky silicon carbide diode
This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Qualified in low profile package, the STPSC10H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains. DS13179 - Rev 2 - March 2021 For further information co...




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