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FDC642P-F085P ON Semiconductor P-Channel MOSFET Datasheet

FDC642P-F085P P채널 20V 4A(Ta) 1.2W(Ta) 표면 실장 TSOT-23-6


ON Semiconductor
FDC642P-F085P
Part Number FDC642P-F085P
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description MOSFET – P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features  Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A  Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A  Fast Switching Speed  Low Gate Charge (6.9 nC Typical)  High Performance Trench Technology for Extrem...
Features
 Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A
 Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A
 Fast Switching Speed
 Low Gate Charge (6.9 nC Typical)
 High Performance Trench Technology for Extremely Low RDS(on)
 SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick)
 AEC−Q101 Qualified and PPAP Capable
 This Device is Pb−Free and is RoHS Compliant Applications
 Load Switch
 Battery Protection
 Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Vol...

Document Datasheet FDC642P-F085P datasheet pdf (1.20MB)
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onsemi
FDC642P-F085P
P채널 20V 4A(Ta) 1.2W(Ta) 표면 실장 TSOT-23-6
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DigiKey

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onsemi
FDC642P_F085P
P-CHANNEL POWER MOSFET (Alt: FDC642P-F085P)
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Avnet Asia

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onsemi
FDC642P-F085P
MOSFET P-ChannelPowerMosfet
1 units: 0.66 USD
10 units: 0.568 USD
100 units: 0.424 USD
500 units: 0.334 USD
1000 units: 0.277 USD
3000 units: 0.235 USD
9000 units: 0.205 USD
24000 units: 0.194 USD
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Mouser Electronics

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Fairchild Semiconductor Corporation
FDC642P-F085P
FDC642P_F085 - P-Channel PowerTrench MOSFET, -20V, -4A, 100m
1000 units: 0.1428 USD
500 units: 0.1512 USD
100 units: 0.1579 USD
25 units: 0.1646 USD
1 units: 0.168 USD
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Rochester Electronics

17041 In Stock
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onsemi
FDC642P-F085P
POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 20V, 0.065OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
1362 units: 0.1313 USD
287 units: 0.147 USD
1 units: 0.315 USD
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Quest Components

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onsemi
FDC642P-F085P
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Chip 1 Exchange

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FDC642P_F085P
P-CHANNEL POWER MOSFET - Tape and Reel (Alt: FDC642P-F085P)
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FDC642P-F085P
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FDC642P-F085P Similar Datasheet

Part Number Description
FDC642P-F085
manufacturer
ON Semiconductor
P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features  Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A  Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A  Fast Switching Speed  Low Gate Charge (6.9 nC Typical)  High Performance Trench Technology for Extremely Low RDS(on)  SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick)  AEC−Q101 Qualified and PPAP Capable  This Device is Pb−Free and is RoHS Compliant Applications  Load Switch  Battery Protection  Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate...




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