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40N60NPFD Silan 600V FIELD STOP IGBT Datasheet


Silan
40N60NPFD
Part Number 40N60NPFD
Manufacturer Silan
Description SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES  40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A  Low conduction loss  Fast switching  High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT40N60NPF...
Features  40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A  Low conduction loss  Fast switching  High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT40N60NPFDPN Package TO-3P Marking 40N60NPFD Hazardous Substance Control Pb free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current TC=25°C TC=100°C Pulsed Collector Current Maximum Power Dissipation (TC=25C) Operating Junction Temperature Storage Temperature Range Symbol VCE VGE IC ICM PD TJ Tstg Ratings 600 ±20 80 40 120 290 2.32 -55~+175 -55~...

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40N60NPFD Similar Datasheet

Part Number Description
40N60NPFDPN
manufacturer
Silan
600V FIELD STOP IGBT
SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES  40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A  Low conduction loss  Fast switching  High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT40N60NPFDPN Package TO-3P Marking 40N60NPFD Hazardous Substance Control Pb free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current TC=25°C TC=100°C Pulsed Collector Current Maximum Power Dissipation (TC=25C) Operating Junction Temperature Storage Temperature Range Symbol VCE VGE IC ICM PD TJ Tstg Rating...




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