logo

R6007JNX ROHM Power MOSFET Datasheet

R6007JNXC7G MOSFETs R6007JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.


ROHM
R6007JNX
Part Number R6007JNX
Manufacturer ROHM (https://www.rohm.com/)
Description R6007JNX   Nch 600V 7A Power MOSFET    Datasheet lOutline VDSS 600V TO-220FM   RDS(on)(Max.) 0.780Ω   ID ±7A   PD 46W            lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS comp...
Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Packing Tube Packing code C7 G Marking R6007JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse I...

Document Datasheet R6007JNX datasheet pdf (2.09MB)
Distributor Distributor
Mouser Electronics
Stock 2308 In Stock
Price
1 units: 1.89 USD
50 units: 1.52 USD
100 units: 1.26 USD
BuyNow BuyNow BuyNow (Manufacturer a ROHM Semiconductor)




R6007JNX Distributor

part
ROHM Semiconductor
R6007JNXC7G
MOSFET, N-CH, 7A, 600V, TO-220FM
1000 units: 1808 KRW
500 units: 2172 KRW
100 units: 2429 KRW
10 units: 2995 KRW
1 units: 3751 KRW
Distributor
element14 Asia-Pacific

0 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNXC7G
N채널 600V 7A(Tc) 46W(Tc) 스루홀 TO-220FM
500 units: 1624.29 KRW
100 units: 1799.06 KRW
50 units: 2186.52 KRW
1 units: 2726 KRW
Distributor
DigiKey

2017 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNXC7G
MOSFETs R6007JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.
1 units: 1.89 USD
50 units: 1.52 USD
100 units: 1.26 USD
Distributor
Mouser Electronics

2308 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNXC7G
MOSFET
1 units: 1.22 USD
10 units: 0.963 USD
Distributor
Chip1Stop

14 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNXC7G
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FM Tube
500 units: 1.2812 USD
250 units: 1.3292 USD
100 units: 1.3847 USD
59 units: 1.4496 USD
Distributor
Verical

990 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNXC7G
716 units: 1.272 USD
383 units: 1.3992 USD
1 units: 3.392 USD
Distributor
Quest Components

792 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNXC7G
N-CH 600V 7A 600mOhm at 15V RoHSconf
1 units: 1.0795 USD
10 units: 1.0379 USD
50 units: 1.0077 USD
100 units: 0.988 USD
Distributor
Ameya Holding Limited

50 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNXC7G
Transistor MOSFET N-CH 600V 7A 3-Pin TO-220FM Tube - Rail/Tube (Alt: R6007JNXC7G)
100000 units: 1.3637 USD
10000 units: 1.39517 USD
8000 units: 1.42664 USD
6000 units: 1.45811 USD
4000 units: 1.48958 USD
2000 units: 1.52105 USD
1000 units: 1.55252 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNXC7G
RoHS(Ship within 1day) - D/C 2019
1000 units: 0.848 USD
500 units: 0.878 USD
100 units: 0.942 USD
50 units: 0.991 USD
10 units: 1.072 USD
1 units: 1.308 USD
Distributor
CoreStaff Co Ltd

990 In Stock
BuyNow BuyNow





R6007JNX Similar Datasheet

Part Number Description
R6007JND3
manufacturer
ROHM
Power MOSFET
R6007JND3   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6007JND3 Quantity (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±3...
R6007JND3
manufacturer
INCHANGE
N-Channel MOSFET
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 96 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.29 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci...
R6007JNJ
manufacturer
ROHM
Power MOSFET
R6007JNJ   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6007JNJ Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±30 ...
R6007JNJ
manufacturer
INCHANGE
N-Channel MOSFET
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 96 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.29 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci...
R6007JNX
manufacturer
INCHANGE
N-Channel MOSFET
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 46 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.7 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy