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R6007JNJ ROHM Power MOSFET Datasheet

R6007JNJGTL MOSFETs R6007JNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.


ROHM
R6007JNJ
Part Number R6007JNJ
Manufacturer ROHM (https://www.rohm.com/)
Description R6007JNJ   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datash...
Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6007JNJ Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ...

Document Datasheet R6007JNJ datasheet pdf (1.46MB)
Distributor Distributor
Mouser Electronics
Stock 0 In Stock
Price
1 units: 2.71 USD
10 units: 2.26 USD
100 units: 1.8 USD
250 units: 1.79 USD
500 units: 1.52 USD
1000 units: 1.13 USD
BuyNow (No Longer Stocked ROHM Semiconductor)




R6007JNJ Distributor

part
ROHM Semiconductor
R6007JNJGTL
MOSFET, N-CH, 7A, 600V, TO-263S
1000 units: 1707 KRW
500 units: 1809 KRW
250 units: 2094 KRW
100 units: 2142 KRW
10 units: 2689 KRW
1 units: 3225 KRW
Distributor
element14 Asia-Pacific

94 In Stock
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part
ROHM Semiconductor
R6007JNJGTL
N채널 600V 7A(Tc) 96W(Tc) 표면 실장 LPTS
1000 units: 1640.821 KRW
Distributor
DigiKey

1000 In Stock
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part
ROHM Semiconductor
R6007JNJGTL
MOSFETs R6007JNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
1 units: 2.71 USD
10 units: 2.26 USD
100 units: 1.8 USD
250 units: 1.79 USD
500 units: 1.52 USD
1000 units: 1.13 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
ROHM Semiconductor
R6007JNJGTL
MOSFET
1 units: 1 USD
10 units: 0.797 USD
50 units: 0.651 USD
100 units: 0.318 USD
Distributor
Chip1Stop

100 In Stock
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part
ROHM Semiconductor
R6007JNJGTL
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) LPTS T/R
100 units: 1.5023 USD
55 units: 1.5726 USD
Distributor
Verical

100 In Stock
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part
ROHM Semiconductor
R6007JNJGTL
75 units: 1.84 USD
34 units: 2.024 USD
1 units: 3.68 USD
Distributor
Quest Components

160 In Stock
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part
ROHM Semiconductor
R6007JNJGTL
Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK
1000 units: 0.94 USD
100 units: 1.02 USD
25 units: 1.13 USD
5 units: 1.28 USD
1 units: 1.43 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
ROHM Semiconductor
R6007JNJGTL
Transistors FETs, MOSFETs Single
1 units: 1.404 USD
10 units: 1.3121 USD
50 units: 1.2378 USD
100 units: 1.1789 USD
250 units: 1.1335 USD
500 units: 1.1005 USD
1000 units: 1.079 USD
Distributor
Ameya Holding Limited

100 In Stock
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part
ROHM Semiconductor
R6007JNJGTL
Transistor MOSFET N-CH 600V 7A 3-Pin TO-263S Emboss T/R - Tape and Reel (Alt: R6007JNJGTL)
100000 units: 1.183 USD
10000 units: 1.2103 USD
8000 units: 1.2376 USD
6000 units: 1.2649 USD
4000 units: 1.2922 USD
2000 units: 1.3195 USD
1000 units: 1.3468 USD
Distributor
Avnet Americas

0 In Stock
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part
ROHM Semiconductor
R6007JNJGTL
Transistor MOSFET N-CH 600V 7A 3-Pin TO-263S Emboss T/R (Alt: R6007JNJGTL)
No price available
Distributor
Avnet Silica

0 In Stock
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R6007JND3   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6007JND3 Quantity (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±3...
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R6007JNX   Nch 600V 7A Power MOSFET    Datasheet lOutline VDSS 600V TO-220FM   RDS(on)(Max.) 0.780Ω   ID ±7A   PD 46W            lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Packing Tube Packing code C7 G Marking R6007JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source ...
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 46 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.7 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec...




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