logo

R6007JNJ INCHANGE N-Channel MOSFET Datasheet

R6007JNJGTL MOSFETs R6007JNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.


INCHANGE
R6007JNJ
Part Number R6007JNJ
Manufacturer INCHANGE
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21...
Features
·Drain Current
  –ID=7A@ TC=25℃
·Drain Source Voltage- : VDSS=600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 780mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 96 W TJ Max. ...

Document Datasheet R6007JNJ datasheet pdf (250.42KB)
Distributor Distributor
Mouser Electronics
Stock 0 In Stock
Price
1 units: 2.71 USD
10 units: 2.26 USD
100 units: 1.8 USD
250 units: 1.79 USD
500 units: 1.52 USD
1000 units: 1.13 USD
BuyNow (No Longer Stocked ROHM Semiconductor)




R6007JNJ Distributor

part
ROHM Semiconductor
R6007JNJGTL
MOSFET, N-CH, 7A, 600V, TO-263S
1000 units: 1707 KRW
500 units: 1809 KRW
250 units: 2094 KRW
100 units: 2142 KRW
10 units: 2689 KRW
1 units: 3225 KRW
Distributor
element14 Asia-Pacific

94 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNJGTL
N채널 600V 7A(Tc) 96W(Tc) 표면 실장 LPTS
1000 units: 1640.821 KRW
Distributor
DigiKey

1000 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNJGTL
MOSFETs R6007JNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
1 units: 2.71 USD
10 units: 2.26 USD
100 units: 1.8 USD
250 units: 1.79 USD
500 units: 1.52 USD
1000 units: 1.13 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
ROHM Semiconductor
R6007JNJGTL
MOSFET
1 units: 1 USD
10 units: 0.797 USD
50 units: 0.651 USD
100 units: 0.318 USD
Distributor
Chip1Stop

100 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNJGTL
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) LPTS T/R
100 units: 1.5023 USD
55 units: 1.5726 USD
Distributor
Verical

100 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNJGTL
75 units: 1.84 USD
34 units: 2.024 USD
1 units: 3.68 USD
Distributor
Quest Components

160 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNJGTL
Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK
1000 units: 0.94 USD
100 units: 1.02 USD
25 units: 1.13 USD
5 units: 1.28 USD
1 units: 1.43 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
ROHM Semiconductor
R6007JNJGTL
Transistors FETs, MOSFETs Single
1 units: 1.404 USD
10 units: 1.3121 USD
50 units: 1.2378 USD
100 units: 1.1789 USD
250 units: 1.1335 USD
500 units: 1.1005 USD
1000 units: 1.079 USD
Distributor
Ameya Holding Limited

100 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNJGTL
Transistor MOSFET N-CH 600V 7A 3-Pin TO-263S Emboss T/R - Tape and Reel (Alt: R6007JNJGTL)
100000 units: 1.183 USD
10000 units: 1.2103 USD
8000 units: 1.2376 USD
6000 units: 1.2649 USD
4000 units: 1.2922 USD
2000 units: 1.3195 USD
1000 units: 1.3468 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JNJGTL
Transistor MOSFET N-CH 600V 7A 3-Pin TO-263S Emboss T/R (Alt: R6007JNJGTL)
No price available
Distributor
Avnet Silica

0 In Stock
BuyNow BuyNow





R6007JNJ Similar Datasheet

Part Number Description
R6007JND3
manufacturer
ROHM
Power MOSFET
R6007JND3   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6007JND3 Quantity (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±3...
R6007JND3
manufacturer
INCHANGE
N-Channel MOSFET
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 96 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.29 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci...
R6007JNJ
manufacturer
ROHM
Power MOSFET
R6007JNJ   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6007JNJ Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±30 ...
R6007JNX
manufacturer
ROHM
Power MOSFET
R6007JNX   Nch 600V 7A Power MOSFET    Datasheet lOutline VDSS 600V TO-220FM   RDS(on)(Max.) 0.780Ω   ID ±7A   PD 46W            lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Packing Tube Packing code C7 G Marking R6007JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source ...
R6007JNX
manufacturer
INCHANGE
N-Channel MOSFET
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 46 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.7 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy