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R6007JND3 ROHM Power MOSFET Datasheet

R6007JND3TL1 MOSFETs R6007JND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.


ROHM
R6007JND3
Part Number R6007JND3
Manufacturer ROHM (https://www.rohm.com/)
Description R6007JND3   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252                lInner circuit    Datas...
Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6007JND3 Quantity (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGS...

Document Datasheet R6007JND3 datasheet pdf (1.45MB)
Distributor Distributor
Mouser Electronics
Stock 2430 In Stock
Price
1 units: 1.84 USD
10 units: 1.34 USD
100 units: 1.22 USD
250 units: 1.12 USD
500 units: 1.02 USD
1000 units: 0.876 USD
2500 units: 0.832 USD
5000 units: 0.801 USD
10000 units: 0.775 USD
BuyNow BuyNow BuyNow (Manufacturer a ROHM Semiconductor)




R6007JND3 Distributor

part
ROHM Semiconductor
R6007JND3TL1
MOSFET, N-CH, 7A, 600V, TO-252
1000 units: 1284 KRW
500 units: 1376 KRW
100 units: 1511 KRW
10 units: 1808 KRW
1 units: 2483 KRW
Distributor
element14 Asia-Pacific

0 In Stock
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part
ROHM Semiconductor
R6007JND3TL1
N채널 600V 7A(Tc) 96W(Tc) 표면 실장 TO-252
1000 units: 1264.593 KRW
500 units: 1490.428 KRW
100 units: 1761.41 KRW
10 units: 2212.8 KRW
1 units: 2669 KRW
Distributor
DigiKey

0 In Stock
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part
ROHM Semiconductor
R6007JND3TL1
Transistor MOSFET N-CH 600V 7A 3-Pin TO-252 Emboss T/R (Alt: R6007JND3TL1)
No price available
Distributor
Avnet Asia

0 In Stock
No Longer Stocked
part
ROHM Semiconductor
R6007JND3TL1
MOSFETs R6007JND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
1 units: 1.84 USD
10 units: 1.34 USD
100 units: 1.22 USD
250 units: 1.12 USD
500 units: 1.02 USD
1000 units: 0.876 USD
2500 units: 0.832 USD
5000 units: 0.801 USD
10000 units: 0.775 USD
Distributor
Mouser Electronics

2430 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JND3TL1
MOSFET
1 units: 0.909 USD
10 units: 0.668 USD
50 units: 0.66 USD
100 units: 0.572 USD
200 units: 0.547 USD
500 units: 0.545 USD
1000 units: 0.5 USD
2000 units: 0.475 USD
2500 units: 0.474 USD
Distributor
Chip1Stop

2500 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JND3TL1
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R
1000 units: 0.9164 USD
500 units: 0.9473 USD
250 units: 0.9828 USD
100 units: 1.0239 USD
80 units: 1.0718 USD
Distributor
Verical

1500 In Stock
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part
ROHM Semiconductor
R6007JND3TL1
968 units: 0.9405 USD
518 units: 1.0346 USD
1 units: 2.508 USD
Distributor
Quest Components

1200 In Stock
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part
ROHM Semiconductor
R6007JND3TL1
Transistors FETs, MOSFETs Single
1 units: 1.042 USD
10 units: 0.9472 USD
50 units: 0.8853 USD
100 units: 0.8352 USD
250 units: 0.7954 USD
500 units: 0.7648 USD
1000 units: 0.7425 USD
2500 units: 0.728 USD
Distributor
Ameya Holding Limited

33 In Stock
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part
ROHM Semiconductor
R6007JND3TL1
Transistor MOSFET N-CH 600V 7A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6007JND3TL1)
250000 units: 0.806 USD
25000 units: 0.8246 USD
20000 units: 0.8432 USD
15000 units: 0.8618 USD
10000 units: 0.8804 USD
5000 units: 0.899 USD
2500 units: 0.9176 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6007JND3TL1
Transistor MOSFET N-CH 600V 7A 3-Pin TO-252 Emboss T/R (Alt: R6007JND3TL1)
No price available
Distributor
Avnet Silica

0 In Stock
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R6007JND3 Similar Datasheet

Part Number Description
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INCHANGE
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 96 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.29 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci...
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R6007JNJ   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6007JNJ Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±30 ...
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 96 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.29 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci...
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R6007JNX   Nch 600V 7A Power MOSFET    Datasheet lOutline VDSS 600V TO-220FM   RDS(on)(Max.) 0.780Ω   ID ±7A   PD 46W            lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Packing Tube Packing code C7 G Marking R6007JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source ...
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 46 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.7 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec...




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