logo

AOTF4N90 Alpha & Omega Semiconductors 4A N-Channel MOSFET Datasheet

AOTF4N90 MOSFET N-CH 900V 4A TO220-3F


Alpha & Omega Semiconductors
AOTF4N90
Part Number AOTF4N90
Manufacturer Alpha & Omega Semiconductors
Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted ...
Features n and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. G AOTF4N90 900 ±30 4* 2.5* 16 2.3 79 158 5 37 0.3 -55 to 150 300 AOTF4N90 65 3.3 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W Rev1.2: May 2024 www.aosmd.com Page 1 of 5 AOTF4N90 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units...

Document Datasheet AOTF4N90 datasheet pdf (373.04KB)
Distributor Distributor
DigiKey
Stock 0 In Stock
Price
1000 units: 0.59459 USD
BuyNow BuyNow BuyNow (Manufacturer a Alpha & Omega Semiconductor)




AOTF4N90 Distributor

part
Alpha & Omega Semiconductor
AOTF4N90
MOSFET N-CH 900V 4A TO220-3F
1000 units: 0.59459 USD
Distributor
DigiKey

0 In Stock
BuyNow BuyNow





AOTF4N90 Similar Datasheet

Part Number Description
AOTF4N60
manufacturer
Alpha & Omega Semiconductors
4A N-Channel MOSFET
Product Summary The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 4A < 2.2W TO-220 Top View TO-220F D D S D G AOT4N60 DS G AOTF4N60(L) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Cur...
AOTF4N60
manufacturer
INCHANGE
N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOTF4N60 ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 7 2.5 16 PD Total Dissipation 35 Tj Operating Junction Temperature -50~150 Tstg Storage Temperature -50~150 UNIT V V A A W ℃ ℃ ·THERMA...
AOTF4N60L
manufacturer
Alpha & Omega Semiconductors
N-Channel MOSFET
Product Summary The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 4A < 2.2W TO-220 Top View TO-220F D D S D G AOT4N60 DS G AOTF4N60(L) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Cur...
AOTF4N90
manufacturer
INCHANGE
N-Channel MOSFET
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse 16 A PD Total Dissipation @TC=25℃ 37 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.3 ℃/W AOTF4N90 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOTF4N90 ELECTRICAL CHARACTERISTICS TC=25℃ u...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy