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BDX78 INCHANGE PNP Transistor Datasheet

BDX78 Transistor


INCHANGE
BDX78
Part Number BDX78
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Complement to Type BDX77 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATIN...
Features csemi is registered trademark isc Silicon PNP Power Transistor BDX78 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -2V ICE...

Document Datasheet BDX78 datasheet pdf (212.19KB)
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BDX78 Similar Datasheet

Part Number Description
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