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BU800 INCHANGE NPN Transistor Datasheet

GBU8005 BRIDGE RECT 1PHASE 50V 8A GBU


INCHANGE
BU800
Part Number BU800
Manufacturer INCHANGE
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5.0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflectio...
Features own Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Base Cutoff Current hFE -1 DC Current Gain IC= 5.0A; IB= 1.0A VCB=750V; IE= 0 VCB=1500V; IE= 0 IC= 0.1A; VCE= 5V hFE -2 DC Current Gain IC= 5A; VCE= 5V VECF C-E Diode Forward Voltage IF= 5A BU800 MIN TYP. MAX UNIT 5 V 5.0 V 1.5 V 50 uA 1 mA 6 30 2.25 2.5 V Switching Times tstg Storage Time tf Fall Time IC = 5A,IB1 = IB2= 1A 12 μs 0.7 μs NOTICE: ISC reserves the rights to make changes of the content herein the ...

Document Datasheet BU800 datasheet pdf (202.79KB)
Distributor Distributor
DigiKey
Stock 38 In Stock
Price
10000 units: 0.66938 USD
5000 units: 0.67173 USD
2000 units: 0.69797 USD
1000 units: 0.73471 USD
500 units: 0.8659 USD
100 units: 1.0233 USD
20 units: 1.2855 USD
1 units: 1.55 USD
1 units: 1.6 USD
BuyNow BuyNow BuyNow (Manufacturer a Diodes Incorporated)




BU800 Distributor

Diodes Incorporated
GBU8005
BRIDGE RECT 1PHASE 50V 8A GBU
10000 units: 0.66938 USD
5000 units: 0.67173 USD
2000 units: 0.69797 USD
1000 units: 0.73471 USD
500 units: 0.8659 USD
100 units: 1.0233 USD
20 units: 1.2855 USD
1 units: 1.55 USD
1 units: 1.6 USD
Distributor
DigiKey

38 In Stock
BuyNow BuyNow
Diodes Incorporated
GBU8005
Bridge Rectifiers 8.0A 50V
1 units: 1.6 USD
10 units: 1.36 USD
500 units: 1.02 USD
1000 units: 0.87 USD
2500 units: 0.827 USD
5000 units: 0.796 USD
10000 units: 0.769 USD
Distributor
Mouser Electronics

17 In Stock
BuyNow BuyNow
HVCA & CKE
KBU8005
Bridge Rectifier; 50V; 300A; 35V; 8A | HVCA KBU8005
100 units: 1.1 USD
1000 units: 1.05 USD
5000 units: 0.99 USD
10000 units: 0.94 USD
Distributor
RS

0 In Stock
No Longer Stocked
Vishay Intertechnologies
VS-EBU8006HF4
Rectifiers 80A 600V Ultrafast 46ns FRED Pt
No price available
Distributor
TTI

0 In Stock
BuyNow BuyNow
SMC Diode Solutions
GBU8005TB
Bridge rectifier: single-phase; Urmax: 50V; If: 8A; Ifsm: 150A; flat
500 units: 0.323 USD
100 units: 0.347 USD
20 units: 0.437 USD
5 units: 0.486 USD
1 units: 0.741 USD
Distributor
TME

0 In Stock
No Longer Stocked
Samsung Semiconductor
HG75BU800NFXZA
75IN LED+TV H
No price available
Distributor
NAC

0 In Stock
No Longer Stocked
Diodes Incorporated
GBU8005
Diode Rectifier Bridge Single 50V 8A 4-Pin Case GBU Tube - Rail/Tube (Alt: GBU8005)
No price available
Distributor
Avnet Americas

0 In Stock
No Longer Stocked
Vishay Intertechnologies
VS-EBU8006HF4
No price available
Distributor
Bristol Electronics

375 In Stock
No Longer Stocked





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te cThe devices are silicon Epitaxial Planar NPN le upower transistors in Darlington configuration with dintegrated base-emitter speed-up diode, mounted so roin TO-220 plastic package. b PThey can be used in horizontal output stages of ) - O lete110 oCRT video displays. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM solete Prroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS b PSymbol Parameter O leteVCBO oVCEV bsVCEO O VEBO Collector-base Voltage (IE = 0) Collector-emitter Voltage (VBE = -6V) Collector-emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) BU806 400 400 200 Value 6 BU807 330 330 150 Unit V V V V IC Collector Current 8A ICM Collector Peak Current 15 A IDM Damper Diode P...
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The BU806 is a silicon epitaxial planer NPN power Darlington transistor in a TO−220 type package with an integrated base−emitter speed−up diode designed for use in high voltage, high current, fast switching applications. In particular, the BU806 can be used in horizontal output stages of 110 CRT video displays and is primarily intended for large screen displays. Absolute Maximum Ratings: Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (VBE = −6V), VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (IB = 0), ...
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INCHANGE
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·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 8A ICM Collector Current-Peak 15 A IBB Base Current Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2 60 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to ...




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