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BU806 NTE Silicon NPN Transistor Datasheet

BU806 TRANS NPN DARL 200V 8A TO220-3


NTE
BU806
Part Number BU806
Manufacturer NTE
Description The BU806 is a silicon epitaxial planer NPN power Darlington transistor in a TO−220 type package with an integrated base−emitter speed−up diode designed for use in high voltage, high current, fast switching applications. In particular, the BU806 can be used in horizontal output stages of 110 CRT v...
Features . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Damper Diode Peak Forward Current, IDM . . . . . . . . . . . . . . . . . . . . . . . ....

Document Datasheet BU806 datasheet pdf (63.70KB)
Distributor Distributor
DigiKey
Stock 35 In Stock
Price
100 units: 2.1 USD
50 units: 2.15 USD
20 units: 2.28 USD
10 units: 2.4 USD
1 units: 2.53 USD
BuyNow BuyNow BuyNow (Manufacturer a NTE Electronics Inc)




BU806 Distributor

SPC Multicomp
BU806
DARLINGTON TRANSISTOR, TO-220
250 units: 1823 KRW
100 units: 2019 KRW
25 units: 2281 KRW
10 units: 2572 KRW
1 units: 2790 KRW
Distributor
element14 Asia-Pacific

3961 In Stock
BuyNow BuyNow
NTE Electronics Inc
BU806
TRANS NPN DARL 200V 8A TO220-3
100 units: 2.1 USD
50 units: 2.15 USD
20 units: 2.28 USD
10 units: 2.4 USD
1 units: 2.53 USD
Distributor
DigiKey

35 In Stock
BuyNow BuyNow
Diodes Incorporated
GBU806_HF
Diode Rectifier Bridge Single 600V 8A 4-Pin GBU Tube (Alt: GBU806_HF)
50000 units: 0.49306 USD
25000 units: 0.50494 USD
10000 units: 0.51741 USD
5000 units: 0.53051 USD
3000 units: 0.53731 USD
2000 units: 0.54429 USD
1000 units: 0.55145 USD
Distributor
Avnet Asia

1000 In Stock
BuyNow BuyNow
Comchip Technology Corporation Ltd
GBU806-G
Bridge Rectifiers BRIDG GBU 8A 600V
1 units: 1.5 USD
10 units: 1.23 USD
100 units: 0.97 USD
500 units: 0.896 USD
1000 units: 0.857 USD
2500 units: 0.816 USD
5000 units: 0.777 USD
10000 units: 0.741 USD
Distributor
Mouser Electronics

145 In Stock
BuyNow BuyNow
Steel City
BU806
Bushing, Insulated Conduit, 2 Inch, Die-Cast Zinc | Steel City by ABB BU806
25 units: 13.49 USD
125 units: 12.95 USD
250 units: 12.56 USD
500 units: 12.14 USD
Distributor
RS

0 In Stock
No Longer Stocked
Thomas & Betts
BU806
Bushing - Insulated Conduit - Trade Size 2 Inches - Width 2.68 Inch - Thickness 0.56 Inch - Die-Cast Zinc.
1000 units: 9.68 USD
500 units: 9.82 USD
250 units: 10.1 USD
100 units: 10.71 USD
50 units: 11.04 USD
25 units: 11.58 USD
5 units: 12.81 USD
Distributor
Onlinecomponents.com

0 In Stock
BuyNow BuyNow
Hewlett Packard Co
BU806
Bipolar Junction Transistor, Darlington, NPN Type, TO-220AB
9 units: 0.55 USD
1 units: 0.66 USD
Distributor
Quest Components

25 In Stock
BuyNow BuyNow
Yangzhou Yangjie Electronics Co Ltd
KBU806
Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 150A
400 units: 0.3 USD
100 units: 0.334 USD
25 units: 0.378 USD
5 units: 0.42 USD
1 units: 0.8 USD
Distributor
TME

400 In Stock
BuyNow BuyNow
TSC Electronics Ltd
KBU806GTO
8 AMP, 800 VOLT STANDARD BRIDGE RECTIFIER Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon
No price available
Distributor
ComSIT Asia

214 In Stock
No Longer Stocked
World Products Inc
GBU806
Bridge Rectifier Diode, 1 Phase, 8A, 600VV(RRM), Silicon
1000 units: 0.571 USD
250 units: 0.678 USD
1 units: 0.93 USD
Distributor
NAC

0 In Stock
BuyNow BuyNow





BU806 Similar Datasheet

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU806/D NPN Darlington Power Transistor This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Damper Diode VF is specified. VF = 2.0 V (max) BU806 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ...
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ON Semiconductort NPN Darlington Power Transistor This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Damper Diode VF is specified. VF = 2.0 V (max) BU806 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS CASE 221A–09 TO–220AB MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Volt...
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te cThe devices are silicon Epitaxial Planar NPN le upower transistors in Darlington configuration with dintegrated base-emitter speed-up diode, mounted so roin TO-220 plastic package. b PThey can be used in horizontal output stages of ) - O lete110 oCRT video displays. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM solete Prroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS b PSymbol Parameter O leteVCBO oVCEV bsVCEO O VEBO Collector-base Voltage (IE = 0) Collector-emitter Voltage (VBE = -6V) Collector-emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) BU806 400 400 200 Value 6 BU807 330 330 150 Unit V V V V IC Collector Current 8A ICM Collector Peak Current 15 A IDM Damper Diode P...
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SEMICONDUCTORS BU806 SILICON DARLINGTON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in a TO-220 plastic package. They are high voltage, high current devices for fast switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEV VCEO VEBO IC ICM IB PT tJ ts Collector-Base Voltage Ratings Value 400 400 200 www.DataSheet.net/ Unit V Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation at Case Temperature Junction Temperature Storage Temperature range Tmb < 25°C V V A A A W °C 6 8 15 2 60 150 -65 to +150 T...
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INCHANGE
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·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 8A ICM Collector Current-Peak 15 A IBB Base Current Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2 60 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to ...




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