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V10D100C Vishay Dual High Voltage (Trench MOS Barrier Schottky Rectifier Datasheet

V10D100CHM3/I 다이오드 어레이 공통 음극 1쌍 쇼트키 100V 5A 표면 실장 TO-263-3, D²Pak(2 리드 + 탭) 변형


Vishay
V10D100C
V10D100C
Part Number V10D100C
Manufacturer Vishay (https://www.vishay.com/)
Description www.vishay.com V10D100C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D100C Anode 1 K FEATURES • Trench MOS Schottky technology generation 2 Availabl...
Features
• Trench MOS Schottky technology generation 2 Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 2 Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheel...

Document Datasheet V10D100C datasheet pdf (121.02KB)
Distributor Distributor
DigiKey
Stock 2000 In Stock
Price
2000 units: 585.106 KRW
BuyNow BuyNow BuyNow (Manufacturer a Vishay Semiconductors)




V10D100C Distributor

part
Vishay Semiconductors
V10D100CHM3/I
다이오드 어레이 공통 음극 1쌍 쇼트키 100V 5A 표면 실장 TO-263-3, D²Pak(2 리드 + 탭) 변형
2000 units: 585.106 KRW
Distributor
DigiKey

2000 In Stock
BuyNow BuyNow
part
Vishay Intertechnologies
V10D100C-M3/I
Schottky Diodes & Rectifiers 10A 100V TrenchMOS
2000 units: 0.775 USD
4000 units: 0.775 USD
10000 units: 0.75 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
Vishay Intertechnologies
V10D100CHM3/I
Schottky Diodes & Rectifiers 10A, 100V, SMPD, TRENCH SKY RECT.
4000 units: 0.406 USD
Distributor
TTI

0 In Stock
BuyNow BuyNow
part
Vishay Intertechnologies
V10D100CHM3/I
1233 units: 0.5684 USD
247 units: 0.6496 USD
1 units: 1.624 USD
Distributor
Quest Components

1456 In Stock
BuyNow BuyNow
part
Vishay Intertechnologies
V10D100C-M3/I
10A,100V,TRENCH SKY RECT. - Tape and Reel (Alt: V10D100C-M3/I)
400000 units: 0.81 USD
200000 units: 0.852 USD
40000 units: 0.894 USD
20000 units: 0.924 USD
12000 units: 0.963 USD
8000 units: 0.996 USD
4000 units: 1.029 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
STMicroelectronics
V10D100C-M3/I
No price available
Distributor
Bristol Electronics

389 In Stock
No Longer Stocked
part
Vishay Intertechnologies
V10D100C-M3/I
Diode Schottky 100V 10A 3-Pin SMPD Plastic T/R (Alt: V10D100C-M3/I)
No price available
Distributor
EBV Elektronik

0 In Stock
BuyNow BuyNow





V10D100C Similar Datasheet

Part Number Description
V10D100C-M3
manufacturer
Vishay
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V10D100C-M3, V10D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V10D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 100 V IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. 100 A 0.60 V 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF ...
V10D100CHM3
manufacturer
Vishay
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V10D100C-M3, V10D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V10D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 100 V IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. 100 A 0.60 V 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF ...




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