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R6009JND3 ROHM Power MOSFET Datasheet

R6009JND3TL1 MOSFETs R6009JND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.


ROHM
R6009JND3
Part Number R6009JND3
Manufacturer ROHM (https://www.rohm.com/)
Description R6009JND3   Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252                lInner circuit    Data...
Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6009JND3 Quantity (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±9 A Pulsed drain current IDP*2 ±27 A Gate - Source voltage VGSS ±3...

Document Datasheet R6009JND3 datasheet pdf (1.45MB)
Distributor Distributor
Mouser Electronics
Stock 2499 In Stock
Price
1 units: 1.75 USD
10 units: 1.46 USD
100 units: 1.16 USD
500 units: 1.05 USD
2500 units: 1.04 USD
BuyNow BuyNow BuyNow (Manufacturer a ROHM Semiconductor)




R6009JND3 Distributor

part
ROHM Semiconductor
R6009JND3TL1
MOSFET, N-CH, 9A, 600V, TO-252
1000 units: 1556 KRW
500 units: 1654 KRW
250 units: 1880 KRW
100 units: 1964 KRW
Distributor
element14 Asia-Pacific

55 In Stock
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part
ROHM Semiconductor
R6009JND3TL1
N채널 600V 9A(Tc) 125W(Tc) 표면 실장 TO-252
500 units: 1505.602 KRW
100 units: 1667.65 KRW
10 units: 2094.5 KRW
1 units: 2524 KRW
Distributor
DigiKey

2460 In Stock
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part
ROHM Semiconductor
R6009JND3TL1
MOSFETs R6009JND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
1 units: 1.75 USD
10 units: 1.46 USD
100 units: 1.16 USD
500 units: 1.05 USD
2500 units: 1.04 USD
Distributor
Mouser Electronics

2499 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6009JND3TL1
MOSFET
1 units: 0.926 USD
10 units: 0.732 USD
50 units: 0.598 USD
100 units: 0.211 USD
200 units: 0.207 USD
500 units: 0.206 USD
1000 units: 0.2 USD
2000 units: 0.196 USD
Distributor
Chip1Stop

2455 In Stock
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part
ROHM Semiconductor
R6009JND3TL1
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
100 units: 1.3798 USD
60 units: 1.4444 USD
Distributor
Verical

100 In Stock
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part
ROHM Semiconductor
R6009JND3TL1
82 units: 1.69 USD
37 units: 1.859 USD
1 units: 3.38 USD
Distributor
Quest Components

157 In Stock
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part
ROHM Semiconductor
R6009JND3TL1
Transistor MOSFET N-CH 600V 9A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6009JND3TL1)
250000 units: 1.0855 USD
25000 units: 1.11055 USD
20000 units: 1.1356 USD
15000 units: 1.16065 USD
10000 units: 1.1857 USD
5000 units: 1.21075 USD
2500 units: 1.2358 USD
Distributor
Avnet Americas

0 In Stock
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part
ROHM Semiconductor
R6009JND3TL1
Transistor MOSFET N-CH 600V 9A 3-Pin TO-252 Emboss T/R (Alt: R6009JND3TL1)
No price available
Distributor
Avnet Silica

0 In Stock
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part
ROHM Semiconductor
R6009JND3TL1
RoHS(Ship within 1day) - D/C
1000 units: 0.845 USD
500 units: 0.875 USD
100 units: 0.938 USD
50 units: 0.988 USD
10 units: 1.498 USD
1 units: 1.827 USD
Distributor
CoreStaff Co Ltd

100 In Stock
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R6009JND3 Similar Datasheet

Part Number Description
R6009JND3
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INCHANGE
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spe...
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spe...
R6009JNJ
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ROHM
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R6009JNJ   Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6009JNJ Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±9 A Pulsed drain current IDP*2 ±27 A Gate - Source voltage VGSS ±30 ...
R6009JNX
manufacturer
INCHANGE
N-Channel MOSFET
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 53 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.37 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci...
R6009JNX
manufacturer
ROHM
Power MOSFET
R6009JNX   Nch 600V 9A Power MOSFET    Datasheet lOutline VDSS 600V TO-220FM   RDS(on)(Max.) 0.585Ω   ID ±9A   PD 53W            lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Packing Tube Packing code C7 G Marking R6009JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±9 A Pulsed drain current IDP*2 ±27 A Gate - Source ...




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