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STPSC10H12-Y STMicroelectronics Automotive grade 1200V power Schottky silicon carbide diode Datasheet


STMicroelectronics
STPSC10H12-Y
Part Number STPSC10H12-Y
Manufacturer STMicroelectronics (https://www.st.com/)
Description The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no rec...
Features
 AEC-Q101 qualified
 No or negligible reverse recovery
 Switching behavior independent of temperature
 Robust high voltage periphery
 PPAP capable
 Operating Tj from -40 °C to 175 °C
 ECOPACK®2 compliant Description The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal ...

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