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AOT7S65L Alpha & Omega Semiconductors Power Transistor Datasheet

AOT7S65L N채널 650V 7A(Tc) 104W(Tc) 스루홀 TO-220


Alpha & Omega Semiconductors
AOT7S65L
Part Number AOT7S65L
Manufacturer Alpha & Omega Semiconductors
Description Product Summary The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche ...
Features D IDM IAR EAR EAS 7 5 TC=25°C Power Dissipation B Derate above 25oC PD 104 0.8 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT7S65L/AOB7S65L 65 0.5 Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1.2 AOTF7S65 650 ±30 7* 5* 30 1.7 43 86 35 0.3 100 20 -55 to 150 300 AOTF7S65 65 -3.6 G S AOTF7...

Document Datasheet AOT7S65L datasheet pdf (557.40KB)
Distributor Distributor
DigiKey
Stock 373 In Stock
Price
500 units: 1191.834 KRW
100 units: 1320.16 KRW
50 units: 1604.32 KRW
1 units: 1991 KRW
BuyNow BuyNow BuyNow (Manufacturer a Alpha & Omega Semiconductor)




AOT7S65L Distributor

part
Alpha & Omega Semiconductor
AOT7S65L
N채널 650V 7A(Tc) 104W(Tc) 스루홀 TO-220
500 units: 1191.834 KRW
100 units: 1320.16 KRW
50 units: 1604.32 KRW
1 units: 1991 KRW
Distributor
DigiKey

373 In Stock
BuyNow BuyNow





AOT7S65L Similar Datasheet

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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 104 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.2 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOT7S60 ELECTRICAL CHARACTERISTICS TC=25℃ unless oth...
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manufacturer
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Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT7S60L & AOB7S60L & AOTF7S60L VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 700V 33A 0.6Ω 8.2nC 1.9µJ D AOT7S60 DS G AOTF7S60 S D G G S G AOB7S60 Absolute Maximum Ratings TA=25°C unl...
AOT7S65L
manufacturer
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.0 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 104 W TJ Max. Operating Junction Temperature -50~150 ℃ Tstg Storage Temperature -50~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.2 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOT7S65L ELECTRICAL CHARACTERISTICS TC=25℃ unless ...




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