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STPSC10H065-Y STMicroelectronics Automotive 650V power Schottky silicon carbide diode Datasheet


STMicroelectronics
STPSC10H065-Y
Part Number STPSC10H065-Y
Manufacturer STMicroelectronics (https://www.st.com/)
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Part Number Description
STPSC10H065
manufacturer
STMicroelectronics
power Schottky silicon carbide diode
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. This STPSC10H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. DS9226 - Rev 8 - January 2020 For further information contact your lo...
STPSC10H065BY-TR
manufacturer
STMicroelectronics
Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions. DS12496 - Rev 2 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com STPSC10H065BY-TR Characteristics 1 Characteristics Table 1. Absolute rat...
STPSC10H065DLF
manufacturer
STMicroelectronics
power Schottky silicon carbide diode
This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Qualified in low profile package, the STPSC10H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains. DS13179 - Rev 2 - March 2021 For further information co...
STPSC10H065G2
manufacturer
STMicroelectronics
high surge silicon carbide power Schottky diode
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Housed in DĀ²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1. The STPSC10H065G2 will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient ...




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