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STPSC12C065-Y STMicroelectronics Automotive 650V power Schottky silicon carbide diode Datasheet


STMicroelectronics
STPSC12C065-Y
Part Number STPSC12C065-Y
Manufacturer STMicroelectronics (https://www.st.com/)
Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing pattern...
Features
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Dedicated to PFC applications
• High forward surge capability
• AEC-Q101 qualified
• PPAP capable
• ECOPACK®2 compliant component Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive t...

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