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SSM3J338R Toshiba Silicon P-Channel MOSFET Datasheet

SSM3J338R,LF MOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A


Toshiba
SSM3J338R
Part Number SSM3J338R
Manufacturer Toshiba (https://www.toshiba.com/)
Description MOSFETs Silicon P-Channel MOS SSM3J338R 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging a...
Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-08 2021-09-16 Rev.2.0 SSM3J338R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±10 Drain current ...

Document Datasheet SSM3J338R datasheet pdf (420.04KB)
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Mouser Electronics
Stock 582506 In Stock
Price
1 units: 0.34 USD
10 units: 0.218 USD
100 units: 0.147 USD
1000 units: 0.1 USD
3000 units: 0.087 USD
9000 units: 0.08 USD
24000 units: 0.078 USD
45000 units: 0.075 USD
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SSM3J338R Distributor

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Toshiba America Electronic Components
SSM3J338R,LF(T
MOSFET, P-CH, 12V, 6A, SOT-23F
1500 units: 143 KRW
500 units: 145 KRW
100 units: 231 KRW
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element14 Asia-Pacific

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Toshiba America Electronic Components
SSM3J338R,LF
P채널 12V 6A(Ta) 1W(Ta) 표면 실장 SOT-23F
1000 units: 182.387 KRW
500 units: 204.37 KRW
100 units: 272.34 KRW
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1 units: 692 KRW
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3555 In Stock
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Toshiba America Electronic Components
SSM3J338RLF(T
TOSSSM3J338RLF(T SMALL LOW ON RESISTANC (Alt: SSM3J338R,LF(T)
No price available
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Avnet Asia

0 In Stock
No Longer Stocked
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Toshiba America Electronic Components
SSM3J338R,LF
MOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A
1 units: 0.34 USD
10 units: 0.218 USD
100 units: 0.147 USD
1000 units: 0.1 USD
3000 units: 0.087 USD
9000 units: 0.08 USD
24000 units: 0.078 USD
45000 units: 0.075 USD
Distributor
Mouser Electronics

582506 In Stock
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part
Toshiba America Electronic Components
SSM3J338R,LF
Trans MOSFET P-CH Si 12V 6A 3-Pin SOT-23F T/R
10 units: 0.0806 USD
1 units: 0.327 USD
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Arrow Electronics

13 In Stock
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Toshiba America Electronic Components
SSM3J338R,LF(T
Trans MOSFET P-CH Si 12V 6A, RL
1000 units: 1.62 HKD
500 units: 1.649 HKD
250 units: 1.68 HKD
100 units: 1.71 HKD
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RS

9850 In Stock
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Toshiba America Electronic Components
SSM3J338R,LF(T
Schottky Barrier Diode, VR=40V, IO=2A, VF=0.39V (Typ.) (@IF=1A)
25 units: 0.166 USD
50 units: 0.124 USD
100 units: 0.115 USD
200 units: 0.106 USD
500 units: 0.0906 USD
1000 units: 0.0859 USD
2000 units: 0.0804 USD
3000 units: 0.0799 USD
6000 units: 0.0755 USD
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Toshiba America Electronic Components
SSM3J338R,LF(B
SSM3J338R,LF(B
407 units: 0.1928 USD
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Verical

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Toshiba America Electronic Components
SSM3J338R,LF
MOSFETs RDSON 20 OHM VDSS=12V ID=6A
3000 units: 0.085 USD
6000 units: 0.082 USD
9000 units: 0.08 USD
24000 units: 0.078 USD
45000 units: 0.077 USD
75000 units: 0.075 USD
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TTI

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Toshiba America Electronic Components
SSM3J338R,LF(B
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: SSM3J338R)
3253 units: 0.2153 USD
651 units: 0.246 USD
1 units: 0.615 USD
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SSM3J338R Similar Datasheet

Part Number Description
SSM3J331R
manufacturer
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MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 55 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration SOT-23F SSM3J331R 1. Gate 2. Source 3. Drain ©2016 Toshiba Corporation 1 Start of commercial production 2011-07 2016-08-24 Rev.5.0 SSM3J331R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 Drain curre...
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SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R ○Power Management Switch Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGSS ± 12 V Drain current DC ID (Note 1) -6.0 A Pulse IDP (Note 1,2) -24.0 Power dissipation PD (Note 3) 1 W t < 10s 2 Channel temperature Storage temperature range Tch 150 °C Tstg -55 to 150 °C SOT-23F 1: Gate...
SSM3J334R
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Silicon P-Channel MOSFET
SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R ○Power Management Switch Applications Unit: mm • Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGSS ± 20 V Drain current DC ID (Note 1) -4 A Pulse IDP (Note 1,2) -16 Power dissipation PD (Note 3) 1 W t < 10s 2 Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high tem...




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