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BTC3906N3G CYStech General Purpose NPN Epitaxial Planar Transistor Datasheet


CYStech
BTC3906N3G
Part Number BTC3906N3G
Manufacturer CYStech
Description The BTC3906N3G is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) • Complement to BTA1514N3G • Pb-free and Halogen-free package Symbol BTC3906N3G Outline SOT-23 B:Base C:Collector E:Emitter Abs...
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTA1514N3G
• Pb-free and Halogen-free package Symbol BTC3906N3G Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient (Note ) Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Free air condition. BTC3906N3G Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Lim...

Document Datasheet BTC3906N3G datasheet pdf (144.83KB)




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BTC3906N3G Similar Datasheet

Part Number Description
BTC3906N3
manufacturer
Cystech Electonics Corp
NPN Transistor
The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) • Complement to BTA1514N3 Symbol BTC3906N3 Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient (Note ) Thermal Resistance, Junction to Case Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Junction Temperature Storage Temperature Note : Free air condition. Limits 180 160 6 600 225 (Note) 560 556 (Note)...




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