logo

2N2222A GOOD-ARK NPN Transistor Datasheet

2N2222A Bipolar Transistors - BJT BJT, TO-92, 40V, 600mA, NPN


GOOD-ARK
2N2222A
Part Number 2N2222A
Manufacturer GOOD-ARK
Description The 2N2222A is silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. It is designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. 2N2222A N...
Features useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. 2N2222A NPN Transistor ABSOLUTE MAXIMUM RATINGS Parameter Collector-Base Votlage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage(IC=0) Collector Current Total Dissipation at TA≤25℃ at TC≤25℃ Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Operating Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Rthja Rthjc TJ TSTG ELECTRICAL CHARACTERISTICS(TC = 25 °C unless otherwise noted) Parameter Symbol Test Condition. Coll...

Document Datasheet 2N2222A datasheet pdf (1.30MB)
Distributor Distributor
Mouser Electronics
Stock 31756 In Stock
Price
1 units: 0.15 USD
10 units: 0.095 USD
100 units: 0.062 USD
500 units: 0.048 USD
1000 units: 0.028 USD
4000 units: 0.027 USD
8000 units: 0.022 USD
24000 units: 0.02 USD
48000 units: 0.016 USD
BuyNow BuyNow BuyNow (Manufacturer a Diotec Semiconductor AG)




2N2222A Distributor

part
NTE Electronics Inc
2N2222A
BIPOLAR TRANSISTOR, NPN, 40V, TO-18
5000 units: 749 KRW
1000 units: 749 KRW
500 units: 873 KRW
100 units: 1026 KRW
10 units: 1299 KRW
1 units: 1533 KRW
Distributor
element14 Asia-Pacific

0 In Stock
BuyNow BuyNow
part
Diotec Semiconductor AG
2N2222A
BJT TO-92 40V 600MA
200000 units: 21.31452 KRW
100000 units: 24.03893 KRW
28000 units: 29.64811 KRW
12000 units: 32.05192 KRW
8000 units: 37.66138 KRW
4000 units: 39.82325 KRW
Distributor
DigiKey

16000 In Stock
BuyNow BuyNow
part
Diotec Semiconductor AG
2N2222A
Bipolar Transistors - BJT BJT, TO-92, 40V, 600mA, NPN
1 units: 0.15 USD
10 units: 0.095 USD
100 units: 0.062 USD
500 units: 0.048 USD
1000 units: 0.028 USD
4000 units: 0.027 USD
8000 units: 0.022 USD
24000 units: 0.02 USD
48000 units: 0.016 USD
Distributor
Mouser Electronics

31756 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N2222A
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Bag
1 units: 2.647 USD
Distributor
Arrow Electronics

6 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N2222A
Small-Signal BJT _ TO-18, Projected EOL: 2049-02-05
1000 units: 2.44 USD
500 units: 2.59 USD
100 units: 2.69 USD
1 units: 2.9 USD
Distributor
Microchip Technology Inc

0 In Stock
BuyNow BuyNow
part
Diotec Semiconductor AG
2N2222A
Bipolar Transistor - TO-92 - 40V - 600mA - NPN
252000 units: 0.0132 USD
152000 units: 0.0134 USD
100000 units: 0.0136 USD
52000 units: 0.0144 USD
28000 units: 0.0152 USD
12000 units: 0.0159 USD
8000 units: 0.017 USD
4000 units: 0.0205 USD
Distributor
Onlinecomponents.com

20000 In Stock
BuyNow BuyNow
part
Diotec Semiconductor AG
2N2222A
Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Ammo
52000 units: 0.0187 USD
28000 units: 0.0198 USD
12000 units: 0.0207 USD
8000 units: 0.0221 USD
4000 units: 0.0267 USD
Distributor
Verical

20000 In Stock
BuyNow BuyNow
part
Microsemi Corporation
2N2222A
No price available
Distributor
Bisco Industries

2 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N2222A
2N2222A 50 V 800 mA NPN Silicon Switching Transistor - TO-18 (TO-206AA)
400 units: 2.7 USD
150 units: 2.85 USD
50 units: 2.93 USD
20 units: 3 USD
1 units: 3.13 USD
Distributor
Future Electronics

0 In Stock
BuyNow BuyNow
part
TT Electronics OPTEK Technology
2N2222AUA
4 Pin, Smt Npn General Purpose Transistor | Optek (TT Electronics) 2N2222AUA
240 units: 23.97 USD
1200 units: 22.77 USD
2400 units: 21.57 USD
4800 units: 20.37 USD
Distributor
RS

0 In Stock
No Longer Stocked





2N2222A Similar Datasheet

Part Number Description
2N222
manufacturer
Motorola
Amplifier Transistors
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2222A/D Amplifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2222A MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient The...
2N2220
manufacturer
ART CHIP
Ultra-Fast Transient Response LDO Regulator
2N2220/2N2221/2N2222 300/600mA, Ultra-Fast Transient Response LDO Regulator 2N2220,2N2221,and 2N2222 are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches. Type 2N2220 2N2221 2N2222 Ordering code Q68000-A4573 Q62702-F134 Q62702-F135 Maximum ratings Collector-emitter Voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature range Total power dissipation (Tamb =25 Total Power dissipation (Tcase=25 Thermal resistance Junction to ambient air Junction to case ) ) VCEO VCBO VEBO Ic Tj Tstg ...
2N2220
manufacturer
Siemens Group
NPN Silicon Planar Transistors
...
2N2221
manufacturer
ART CHIP
Ultra-Fast Transient Response LDO Regulator
2N2220/2N2221/2N2222 300/600mA, Ultra-Fast Transient Response LDO Regulator 2N2220,2N2221,and 2N2222 are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches. Type 2N2220 2N2221 2N2222 Ordering code Q68000-A4573 Q62702-F134 Q62702-F135 Maximum ratings Collector-emitter Voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature range Total power dissipation (Tamb =25 Total Power dissipation (Tcase=25 Thermal resistance Junction to ambient air Junction to case ) ) VCEO VCBO VEBO Ic Tj Tstg ...
2N2221
manufacturer
Motorola
NPN Transistor
2N2218I A, 2N2219I A 2N2221 I A{sILiCON) 2N2222,A, 2N5581 , 2N5582 NPN SILICON ANNULAR HERMETIC TRANSISTORS . . . widely used "Industry Standard" transistors for applications as medium-speed switches and as amplifiers from audio to VHF frequencies. • DC Current Gain Specified - 1.0 to 500 mAdc • Low Collector-Emitter Saturation Voltage - VCE(sat) @ IC = 500 mAdc = 1.6 Vdc (Max) - Non-A Suffix = 1.0 Vdc (Max) - A-Suffix • High Current-Gain-Bandwidth Product - fT = 250 MHz (Min) @ IC = 20 mAdc - All Types Except = 300 MHz (Min) @ IC = 20 mAdc - 2N2219A, 2N2222A, 2N5582 • Complements to PNP 2N2904,A thru 2N2907,A • JAN/JANTX Available for all devices NPN SILICON SWITCHING AND AMPLIFIER TRANSI...
2N2221
manufacturer
CDIL
NPN SILICON PLANAR SWITCHING TRANSISTORS
SYMBOL 2N2221, 22 VCEO Collector Emitter Voltage 30 VCBO Collector Base Voltage 60 Emitter Base Voltage Collector Current Continuous Power Dissipation @Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range VEBO IC PD PD Tj, Tstg 5 800 500 2.28 1.2 6.85 -65 to +200 UNIT V V V mA mW mW/ºC W mW/ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Leakage Current BVCEO BVCBO BVEBOf ICBO IC=10mA,IB=0 IC=10µA.IE=0 IE=10µA, IC=0 VCB=50V, IE=0 VALUE MIN MAX 30 60 5V 10 10 ...
2N2221
manufacturer
STMicroelectronics
Silicon Planar Epitaxial NPN transistor
The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I...
2N2221
manufacturer
Comset Semiconductor
Switching Silicon Transistors
NPN 2N2221 – 2N2221A 2N2222 – 2N2222A SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation Tcase= 25° V V V mA W 0.5 1.8 175 -65 to +200 °C °C TJ TStg Junction Temperature Sto...
2N2221
manufacturer
Central
SILICON NPN TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 60 30 5.0 800 500 1.2 -65 to +200 350 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=50V - ICBO VCB=50V, TA=150°C - IEBO VEB=3.0V - B...
2N2221
manufacturer
Seme LAB
Bipolar NPN Device
2N2221 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 30V IC = 0.8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 10/0.15 (VCE / IC) * Maximum Working Voltage Min. 40 Typ. 250M Max. 30 0.8 120 0.5 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@sem...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy