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STPSC12065 STMicroelectronics 650V power Schottky silicon carbide diode Datasheet

STPSC12065G2-TR SiC Schottky Diodes 650 V power Schottky silicon carbide diode


STMicroelectronics
STPSC12065
Part Number STPSC12065
Manufacturer STMicroelectronics (https://www.st.com/)
Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patter...
Features
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Dedicated to PFC applications
• High forward surge capability
• Operating Tj from -40 °C to 175 °C
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
• ECOPACK2 compliant
• Power efficient product Applications
• DC/DC converter
• High frequency inverter
• Snubber
• Boost PFC function Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 ...

Document Datasheet STPSC12065 datasheet pdf (433.74KB)
Distributor Distributor
Mouser Electronics
Stock 1414 In Stock
Price
1 units: 3.98 USD
10 units: 3.34 USD
100 units: 2.71 USD
250 units: 2.55 USD
500 units: 2.4 USD
1000 units: 2.05 USD
2000 units: 1.93 USD
BuyNow BuyNow BuyNow (Manufacturer a STMicroelectronics)




STPSC12065 Distributor

part
STMicroelectronics
STPSC12065D
SIC DIODE, SINGLE, 650V, 12A, TO220AC
1000 units: 2448 KRW
500 units: 2510 KRW
100 units: 2712 KRW
10 units: 3144 KRW
1 units: 4385 KRW
Distributor
element14 Asia-Pacific

4 In Stock
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part
STMicroelectronics
STPSC12065GY-TR
다이오드 실리콘 카바이드 쇼트키 650V 12A 표면 실장 D²PAK
500 units: 3405.898 KRW
100 units: 3831.66 KRW
10 units: 4735.7 KRW
1 units: 5640 KRW
Distributor
DigiKey

780 In Stock
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part
STMicroelectronics
STPSC12065G2-TR
SiC Schottky Diodes 650 V power Schottky silicon carbide diode
1 units: 3.98 USD
10 units: 3.34 USD
100 units: 2.71 USD
250 units: 2.55 USD
500 units: 2.4 USD
1000 units: 2.05 USD
2000 units: 1.93 USD
Distributor
Mouser Electronics

1414 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC12065D
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220AC Tube
1000 units: 1.546 USD
500 units: 1.557 USD
100 units: 1.6 USD
10 units: 1.983 USD
1 units: 2.331 USD
Distributor
Arrow Electronics

116990 In Stock
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part
STMicroelectronics
STPSC12065GY-TR
Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode
1 units: 3.83 USD
10 units: 3.21 USD
100 units: 2.61 USD
250 units: 2.59 USD
500 units: 2.31 USD
Distributor
STMicroelectronics

230 In Stock
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part
STMicroelectronics
STPSC12065D
STPSC12065D, 650V Pwr Schottky SiC diode, PK
25 units: 24.82 HKD
15 units: 25.2 HKD
5 units: 25.86 HKD
Distributor
RS

50 In Stock
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part
STMicroelectronics
STPSC12065D
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220AC Tube
1000 units: 1.546 USD
500 units: 1.557 USD
100 units: 1.6 USD
10 units: 1.983 USD
4 units: 2.331 USD
Distributor
Verical

116990 In Stock
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part
STMicroelectronics
STPSC12065D
Diode: Schottky rectifying; THT; 650V; 12A; TO220AC; Ufmax: 1.65V
500 units: 2.78 USD
100 units: 2.93 USD
25 units: 3.25 USD
5 units: 3.68 USD
1 units: 4.09 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
STMicroelectronics
STPSC12065DY
Diode SiC Schottky 650V 12A 2-Pin TO-220ACFP Tube - Bulk (Alt: STPSC12065DY)
5000 units: 2.13942 USD
2500 units: 2.1886 USD
500 units: 2.23778 USD
250 units: 2.28696 USD
110 units: 2.33615 USD
60 units: 2.38533 USD
50 units: 2.43451 USD
Distributor
Avnet Americas

2640 In Stock
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part
STMicroelectronics
STPSC12065GY-TR
Diode SiC Schottky 650V 12A 3-Pin TO-263 T/R (Alt: STPSC12065GY-TR)
No price available
Distributor
Avnet Silica

2000 In Stock
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STPSC12065 Similar Datasheet

Part Number Description
STPSC1206
manufacturer
ST Microelectronics
600V power Schottky silicon carbide diode
These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics. The recovery characteristics are independent of the temperature. Using these diodes will significantly reduce the switching power losses of the associated MOSFET, and thus increase the efficiency of the overall application. These diodes will then outperform the power factor correction circuit operating in hard switching conditions. K A TO-220AC STPSC1206D Table 1. Device summary IF(AV) VRRM Tj (max) QC (typ) 12 A 600 V 175 °C 12 nC September 2009 Doc ID ...
STPSC12065-Y
manufacturer
STMicroelectronics
Automotive 650V 12A silicon carbide power Schottky diode
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off ...




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