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STPSC12065-Y STMicroelectronics Automotive 650V 12A silicon carbide power Schottky diode Datasheet


STMicroelectronics
STPSC12065-Y
Part Number STPSC12065-Y
Manufacturer STMicroelectronics (https://www.st.com/)
Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off ...
Features
• AEC-Q101 qualified
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Dedicated to PFC applications
• High forward surge capability
• PPAP capable
• Operating Tj from -40 °C to 175 °C
• VRRM guaranteed from -40 to +175 °C
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
• ECOPACK®2 compliant Applications
• On board charger Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure...

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STPSC12065-Y Similar Datasheet

Part Number Description
STPSC12065
manufacturer
STMicroelectronics
650V power Schottky silicon carbide diode
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1. Product status link STPSC12065 Product summary Symbol Value IF(AV) 12 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V DS11623 - Rev 3 - March 2021 ...




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