logo

UPC1678B NEC 1.9GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER Datasheet


NEC
UPC1678B
Part Number UPC1678B
Manufacturer NEC
Description ...
Features ...

Document Datasheet UPC1678B datasheet pdf (174.17KB)




UPC1678B Distributor






UPC1678B Similar Datasheet

Part Number Description
UPC1675G
manufacturer
NEC
GENERAL PURPOSE WIDE BNAD AMPLIFIER
The µPC1675G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed for use as a wide bnad amplifier convers from HF band to UHF band. FEATURES • Excellent frequency response : 1.9 GHz TYP. @ 3 dB down below flat gain. • High isolation. • Super small package. • Uni- and low voltage operation : VCC = 5 V • Input and output matching 50 Ω. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage Total Power Dissipation Operating Temperature Storage Temperature VCC PT Topt Tstg 6 200 −40 to +85 −55 to +150 V mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V) CHARACTERISTIC Circuit Current Power Gain Noise Figure Upper Limit Operating Frequency I...
UPC1676B
manufacturer
NEC
BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER
The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1676P). NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. Frequency, f (MHz) ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 5 V, f = 500 MHz) PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS PSAT BW NF RLIN RLOUT ISOL RTH(J-C) PARAMETERS AND CONDITIONS Supply Current Small Signal Gain Saturated Output Power Bandwidth 3 dB down from gain at 100 MHz Noise Figure Input Ret...
UPC1676G
manufacturer
NEC
GENERAL PURPOSE WIDE BNAD AMPLIFIER
The µPC1676G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed for use as a wide band amplifier covers from HF band to UHF band. FEATURES • Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below flat gain. • High power gain : 22 dB TYP. @ f = 0.5 GHz. • High isolation. • Super small package. • Uni- and low voltage operation : VCC = 5 V • Input and output matching 50 Ω. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage Total Power Dissipation Operating Temperature Storage Temperature VCC PT Topt Tstg 6 200 −40 to +85 −55 to +150 V mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V) CHARACTERISTIC Circuit Current Power Gain N...
UPC1676P
manufacturer
NEC
BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER
The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1676P). NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. Frequency, f (MHz) ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 5 V, f = 500 MHz) PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS PSAT BW NF RLIN RLOUT ISOL RTH(J-C) PARAMETERS AND CONDITIONS Supply Current Small Signal Gain Saturated Output Power Bandwidth 3 dB down from gain at 100 MHz Noise Figure Input Ret...
UPC1677
manufacturer
NEC
1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER
The UPC1677 is a silicon monolithic integrated circuit designed as a wide-band amplifier covering the HF to UHF bands. The device features high output power, 19.5 dBm typical, high gain, 24 dB typical and operates from a single 5 volt supply. The UPC1677 is available in an 8 lead ceramic flat package (UPC1677B). NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. -40 100 500 1000 3000 Frequency, f (MHz) ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 5 V, f = 500 MHz) PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS PSAT BW NF RLIN RLOUT ISOL ∆ GT RTH (J-A)1 RTH (J-C) PARAMETERS AND CONDITIONS Circuit Current (No Input) Small Signal Gain Satura...
UPC1677B
manufacturer
NEC
1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER
The UPC1677 is a silicon monolithic integrated circuit designed as a wide-band amplifier covering the HF to UHF bands. The device features high output power, 19.5 dBm typical, high gain, 24 dB typical and operates from a single 5 volt supply. The UPC1677 is available in an 8 lead ceramic flat package (UPC1677B). NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. -40 100 500 1000 3000 Frequency, f (MHz) ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 5 V, f = 500 MHz) PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS PSAT BW NF RLIN RLOUT ISOL ∆ GT RTH (J-A)1 RTH (J-C) PARAMETERS AND CONDITIONS Circuit Current (No Input) Small Signal Gain Satura...
UPC1678G
manufacturer
NEC
2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER
The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESAT™IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Supply voltage • Saturated output power • Wideband ...
UPC1678GV
manufacturer
CEL
2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER
NEC's UPC1678GV is a silicon monolithic integrated circuit designed as a wide-band amplifier covering the HF to UHF bands. The device features high output power, 18 dBm TYP, high gain, 23 dB TYP and operates from a single 5 volt supply. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE 40 30 20 10 0 -10 10 30 GP VCC = 5.5 V 5.0 V 4.5 V 5.5 V 5.0 V 12 10 8 NF 4.5 V 100 300 1000 6 4 3000 Frequency, f (MHz) ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = +5 V, f = 500 MHz, ZL = ZS = 50 Ω) PART NUMBER PACKAGE OUTLINE SYM...
UPC1678GV
manufacturer
NEC
2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER
The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESAT™IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Supply voltage • Saturated output power • Wideband ...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy