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2N6180 RCA Power Transistors Datasheet


RCA
2N6180
Part Number 2N6180
Manufacturer RCA
Description _________________________________ File No. 562 OOcn5LJO Solid State Division Power Transistors 2N6178 2N6180 2N6179 2N6181 /.9 .c~/// "Plastic TOoS" Silicon N-P-N & P-N-P Power Transistors "Plastic TO-S" General-Purpose Types for Large-Signal, Medium-Power Applications Features: • Maximum area·o...
Features
• Maximum area
·of-operation curves
• Planar construction for low-noise and low-leakage characteristics
• Low saturation voltage (2N6178, 2N61801
• High beta (2N6179, 2N61811
• Fast switching (2N6178, 2N61791
• "Plastic TO-S" package with insulated mounting hole RCA types 2N6178, 2N6179, 2N6180, and 2N6181
· are silicon power transistors intended for large-signal, mediumpower applications in industrial and commercial equipment. The 2N6178 and 2N6179 are triple-diffused silicon n-p-n planar types. These types have features similar to the popular 2N2102 plus higher collector-current ratings and ...

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·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6098 VCBO Collector-base voltage 2N6099 2N6100 2N6101 2N6098 VCEO Collector-emitter voltage 2N6099 2N6100 2N6101 VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 70 70 80 80 70 70 80 80 8 10 75 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to c...
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·With TO-220 package ·2N6102 type with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 45 45 8 16 75 150 -65~150 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Produ...
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·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 40 V VCER Collector-Emitter Voltage RBE= 100Ω 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~1...
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manufacturer
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File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications Features: • Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves • Thermal-cvcle rating curve These RCA types are hometaxial-base silicon n-p-n transistors. Tvpes 2N609B, 2N6100. and 2N6102...




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