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2N6186 ETC MEDIUM-POWER PNP SILICON TRANSISTORS Datasheet

2N6186 Bipolar Transistors - BJT Power BJT


ETC
2N6186
Part Number 2N6186
Manufacturer ETC
Description 2N6186 thru 2N6189 (SILICON) MEDIUM-POWER PNP SILICON TRANSISTORS . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage VCE(satl = 1.2 Vdc (Maxi @ IC = 10 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in t...
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Document Datasheet 2N6186 datasheet pdf (315.32KB)
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Mouser Electronics
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100 units: 268.67 USD
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Microchip Technology Inc
2N6186
POWER BJT
100 units: 359885.34 KRW
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DigiKey

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Microchip Technology Inc
2N6186
Bipolar Transistors - BJT Power BJT
100 units: 268.67 USD
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Mouser Electronics

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Microchip Technology Inc
2N6186
Power BJT _ TO-59/I, Projected EOL: 2049-02-05
1 units: 268.67 USD
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Microchip Technology Inc

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Microchip Technology Inc
2N6186
100 units: 243.24 USD
75 units: 248.2 USD
50 units: 364.63 USD
25 units: 713.91 USD
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Onlinecomponents.com

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Microchip Technology Inc
2N6186
100 units: 266.55 USD
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Future Electronics

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Microchip Technology Inc
2N6186
Transistor BJT PNP 80V 10A TO-59 - Bulk (Alt: 2N6186)
500 units: 239.89 USD
100 units: 249.49 USD
1 units: 268.67 USD
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Avnet Americas

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Motorola Semiconductor Products
2N6186
MOT 2N6186 UNINSPECTED BARE DIE
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ES Components

312 In Stock
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Microchip Technology Inc
2N6186
100 units: 243.24 USD
75 units: 248.2 USD
50 units: 364.63 USD
25 units: 713.91 USD
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Master Electronics

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2N6186 Similar Datasheet

Part Number Description
2N6100
manufacturer
INCHANGE
NPN Transistor
·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTIC...
2N6100
manufacturer
RCA
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File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications Features: • Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves • Thermal-cvcle rating curve These RCA types are hometaxial-base silicon n-p-n transistors. Tvpes 2N609B, 2N6100. and 2N6102...
2N6100
manufacturer
SavantIC
Silicon Power Transistor
·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6098 VCBO Collector-base voltage 2N6099 2N6100 2N6101 2N6098 VCEO Collector-emitter voltage 2N6099 2N6100 2N6101 VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 70 70 80 80 70 70 80 80 8 10 75 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to c...
2N6101
manufacturer
RCA
Power Transistors
File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications Features: • Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves • Thermal-cvcle rating curve These RCA types are hometaxial-base silicon n-p-n transistors. Tvpes 2N609B, 2N6100. and 2N6102...
2N6101
manufacturer
SavantIC
Silicon Power Transistor
·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6098 VCBO Collector-base voltage 2N6099 2N6100 2N6101 2N6098 VCEO Collector-emitter voltage 2N6099 2N6100 2N6101 VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 70 70 80 80 70 70 80 80 8 10 75 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to c...
2N6101
manufacturer
INCHANGE
NPN Transistor
·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power liner amplifier and switching service in consumer ,automotive and industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~1...
2N6102
manufacturer
RCA
Power Transistors
File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications Features: • Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves • Thermal-cvcle rating curve These RCA types are hometaxial-base silicon n-p-n transistors. Tvpes 2N609B, 2N6100. and 2N6102...
2N6102
manufacturer
SavantIC
Silicon Power Transistor
·With TO-220 package ·2N6102 type with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 45 45 8 16 75 150 -65~150 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Produ...
2N6102
manufacturer
INCHANGE
NPN Transistor
·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 40 V VCER Collector-Emitter Voltage RBE= 100Ω 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~1...
2N6103
manufacturer
RCA
Power Transistors
File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications Features: • Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves • Thermal-cvcle rating curve These RCA types are hometaxial-base silicon n-p-n transistors. Tvpes 2N609B, 2N6100. and 2N6102...




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