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BCW29LT1 Motorola Inc General Purpose Transistors Datasheet


Motorola  Inc
BCW29LT1
Part Number BCW29LT1
Manufacturer Motorola Inc
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW29LT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER BCW29LT1 BCW30LT1 3 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol V...
Features reakdown Voltage (IC =
  –2.0 mAdc, IE = 0) Collector
  –Emitter Breakdown Voltage (IC =
  –100 µAdc, VEB = 0) Collector
  –Base Breakdown Voltage (IC =
  –10 µAdc, IC = 0) Emitter
  –Base Breakdown Voltage (IE =
  –10 µAdc, IC = 0) Collector Cutoff Current (VCB =
  –32 Vdc, IE = 0) (VCB =
  –32 Vdc, IE = 0, TA = 100°C) 1. FR
  – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO — —
  –100
  –10 nAdc µAdc
  –32
  –32
  –32
  –5.0 — — — — Vdc Vdc Vdc Vdc   0.062 in.   0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small
  –Signal Transistors, FETs and Diodes De...

Document Datasheet BCW29LT1 datasheet pdf (451.62KB)




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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous V CEO V CBO V EBO IC 2 BASE Value –32 –32 –5.0 –100 1 EMITTER Unit Vdc Vdc Vdc mAdc BCW29LT1 BCW30LT1 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg...




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