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2SC2756R NEC NPN Silicon Transistor Datasheet


NEC
2SC2756R
Part Number 2SC2756R
Manufacturer NEC
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Document Datasheet 2SC2756R datasheet pdf (86.58KB)




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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ...
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) ) ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC2754 HIGH FREQUENCY AMPLIFIER APPLICATIONS, LOW FREQUENCY AMPLIFIER APPLICATIONS, HIGH SPEED SWITCHING APPLICATIONS. Unit in mm . High Transition Frequency : f T=400MHz(Typ. . Low VcE(sat) : V CE ( sat) =0. 5V(Max. . Small Collector Output Capacitance : C b=3. 5pF(Max. . High Speed Switching. . Designed for Complementary Use with 2SA1164. MAXIMUM RATINGS (Ta=2 5°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation VEBO ic IB PC 100 mA 50 mA 200 mW 1. EMITTER 2. COLLECTOR 3. BASE Junction...
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