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BUL128D-B STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet

BUL128D-B Bipolar Transistors - BJT High volt fast-switching NPN power transistor


STMicroelectronics
BUL128D-B
Part Number BUL128D-B
Manufacturer STMicroelectronics (https://www.st.com/)
Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in l...
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Document Datasheet BUL128D-B datasheet pdf (223.55KB)
Distributor Distributor
Mouser Electronics
Stock 3178 In Stock
Price
1 units: 0.68 USD
10 units: 0.56 USD
100 units: 0.407 USD
500 units: 0.34 USD
1000 units: 0.279 USD
2000 units: 0.249 USD
5000 units: 0.239 USD
10000 units: 0.226 USD
25000 units: 0.223 USD
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BUL128D-B Distributor

part
STMicroelectronics
BUL128D-B
TRANSISTOR, NPN, TO-220
5000 units: 320 KRW
1000 units: 348 KRW
500 units: 399 KRW
100 units: 462 KRW
10 units: 547 KRW
1 units: 651 KRW
Distributor
element14 Asia-Pacific

0 In Stock
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part
STMicroelectronics
BUL128D-B
트랜지스터 - 양극(BJT) - 단일 NPN 400V 4A 70W 스루홀 TO-220
10000 units: 326.1649 KRW
5000 units: 352.2566 KRW
2000 units: 371.828 KRW
1000 units: 417.497 KRW
500 units: 490.558 KRW
100 units: 587.09 KRW
50 units: 808.94 KRW
1 units: 981 KRW
Distributor
DigiKey

2845 In Stock
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part
STMicroelectronics
BUL128D-B
Bipolar Transistors - BJT High volt fast-switching NPN power transistor
1 units: 0.68 USD
10 units: 0.56 USD
100 units: 0.407 USD
500 units: 0.34 USD
1000 units: 0.279 USD
2000 units: 0.249 USD
5000 units: 0.239 USD
10000 units: 0.226 USD
25000 units: 0.223 USD
Distributor
Mouser Electronics

3178 In Stock
BuyNow BuyNow
part
STMicroelectronics
BUL128D-B
High voltage fast-switching NPN power transistor
1 units: 0.67 USD
10 units: 0.55 USD
100 units: 0.4 USD
500 units: 0.33 USD
Distributor
STMicroelectronics

3178 In Stock
BuyNow BuyNow
part
STMicroelectronics
BUL128D-B
Transistor Bipolar NPN 400V 4A TO220, PK
30 units: 4.635 HKD
20 units: 4.707 HKD
10 units: 4.827 HKD
Distributor
RS

20 In Stock
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part
STMicroelectronics
BUL128DB
Trans GP BJT NPN 400V 4A 70000mW 3-Pin(3+Tab) TO-220AB Tube
5000 units: 0.24 USD
2000 units: 0.2458 USD
1000 units: 0.2737 USD
Distributor
Verical

2950 In Stock
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part
STMicroelectronics
BUL128D-B
BUL128 Series NPN 700V 4 A High Voltage Fast-Switching Power Transistor - TO-220
5000 units: 0.22 USD
4000 units: 0.23 USD
3000 units: 0.23 USD
2000 units: 0.235 USD
1000 units: 0.24 USD
Distributor
Future Electronics

0 In Stock
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part
STMicroelectronics
BUL128D-B
4A, 400V, NPN, SI, POWER TRANSISTOR, TO-220AB
11 units: 0.4125 USD
1 units: 0.495 USD
Distributor
Quest Components

37 In Stock
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part
STMicroelectronics
BUL128D-B
Transistor: NPN; bipolar; 400V; 4A; 70W; TO220AB
1000 units: 0.313 USD
500 units: 0.323 USD
250 units: 0.359 USD
100 units: 0.411 USD
50 units: 0.455 USD
10 units: 0.557 USD
1 units: 0.646 USD
Distributor
TME

39 In Stock
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part
STMicroelectronics
BUL128DB
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
No price available
Distributor
ComSIT Asia

20000 In Stock
No Longer Stocked





BUL128D-B Similar Datasheet

Part Number Description
BUL128D
manufacturer
TGS
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting ABSOLUTE MAXIMUM RATINGS Parameter ol Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg Value Unit 700 V 400 V 9.0 V 4.0 A 2.0 A 70 W 150 ...
BUL128D
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Inchange Semiconductor
Silicon NPN Power Transistor
·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-Peak (tp<5 ms) IB Base current IBM Base current-Peak (tp<5 ms) PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25℃ THERMAL CHARACTERISTICS SYMB...
BUL128DB
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Inchange Semiconductor
Silicon NPN Power Transistor
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for electronic ballasts for fluorescent lighting. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-peak tp<5ms 8A IB Base Current-Continuous 2A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYM...
BUL128DR7
manufacturer
BLUE ROCKET ELECTRONICS
Silicon NPN transistor
TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package.  / Features 、、N ,、,。 NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. / Applications 。 Electronic ballasts for fluorescent lighting, flyback and forward single transistor low power converters . / Equivalent Circuit / Pinning 12 3 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BUL128DR7 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Vo...
BUL128DR8
manufacturer
BLUE ROCKET ELECTRONICS
Silicon NPN transistor
TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features 、、N ,、,。 NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. / Applications 。 Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters . / Equivalent Circuit / Pinning 12 3 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BUL128DR8 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector...




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