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BUL1203 STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet

BUL1203E 트랜지스터 - 양극(BJT) - 단일 NPN 550V 5A 100W 스루홀 TO-220


STMicroelectronics
BUL1203
BUL1203
Part Number BUL1203
Manufacturer STMicroelectronics (https://www.st.com/)
Description The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight h FE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakd...
Features ltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1200 1200 550 9 5 8 2 4 100 -65 to 150 150 Unit V V V V A A A A W o o C C 1/7 December 2003 BUL1203E THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Test Conditions V CE = 1200 V V CE = 550...

Document Datasheet BUL1203 datasheet pdf (209.72KB)
Distributor Distributor
DigiKey
Stock 0 In Stock
Price
5000 units: 1067.4324 KRW
2500 units: 1109.1288 KRW
1250 units: 1167.5088 KRW
500 units: 1375.982 KRW
250 units: 1584.476 KRW
100 units: 1626.11 KRW
50 units: 1976.48 KRW
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BUL1203 Distributor

part
STMicroelectronics
BUL1203E
트랜지스터 - 양극(BJT) - 단일 NPN 550V 5A 100W 스루홀 TO-220
5000 units: 1067.4324 KRW
2500 units: 1109.1288 KRW
1250 units: 1167.5088 KRW
500 units: 1375.982 KRW
250 units: 1584.476 KRW
100 units: 1626.11 KRW
50 units: 1976.48 KRW
Distributor
DigiKey

0 In Stock
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part
STMicroelectronics
BUL1203E
Bipolar Transistors - BJT N Ch 550V 5A PWR TRANS
1 units: 1.7 USD
10 units: 1.4 USD
100 units: 1.12 USD
250 units: 1.04 USD
500 units: 0.944 USD
1000 units: 0.715 USD
10000 units: 0.698 USD
Distributor
Mouser Electronics

1000 In Stock
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part
STMicroelectronics
BUL1203E
High voltage fast-switching NPN power transistor
1 units: 1.67 USD
10 units: 1.37 USD
100 units: 1.1 USD
250 units: 1.02 USD
500 units: 0.93 USD
Distributor
STMicroelectronics

1000 In Stock
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part
STMicroelectronics
BUL1203E
Trans GP BJT NPN 550V 5A 100000mW 3-Pin(3+Tab) TO-220AB
5000 units: 0.6888 USD
2500 units: 0.7095 USD
2000 units: 0.7358 USD
1250 units: 0.7751 USD
1000 units: 0.8459 USD
500 units: 0.9145 USD
250 units: 1.0753 USD
100 units: 1.1003 USD
50 units: 1.3515 USD
10 units: 1.3751 USD
Distributor
Verical

27000 In Stock
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part
STMicroelectronics
BUL1203E
Transistor: NPN; bipolar; 550V; 5A; 100W; TO220AB
250 units: 0.77 USD
50 units: 0.83 USD
10 units: 0.92 USD
3 units: 1.05 USD
1 units: 1.25 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
STMicroelectronics
BUL1203E
Trans GP BJT NPN 550V 5A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: BUL1203E)
6000 units: 0.51671 USD
4000 units: 0.52782 USD
2000 units: 0.53893 USD
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Avnet Americas

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STMicroelectronics
BUL1203E
Trans GP BJT NPN 550V 5A 3-Pin(3+Tab) TO-220 (Alt: BUL1203E)
No price available
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Avnet Silica

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STMicroelectronics
BUL1203
No price available
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Bristol Electronics

11 In Stock
No Longer Stocked
part
STMicroelectronics
BUL1203E
Trans GP BJT NPN 550V 5A 3-Pin(3+Tab) TO-220 (Alt: BUL1203E)
No price available
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EBV Elektronik

0 In Stock
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BUL1203 Similar Datasheet

Part Number Description
BUL1203E
manufacturer
STMicroelectronics
High voltage fast-switching NPN power transistor
The BUL1203E is manufactured using diffused collector in planar technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his enhanced high voltage structure 1 (EHVS1) it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Product status link BUL1203E Product summary Order code BUL1203E Marking BUL1203E Package TO-220 Packing Tube DS2301 - Rev 4 - April 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings T...
BUL1203E
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INCHANGE
NPN Transistor
·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage VBE= 0 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL ...
BUL123S
manufacturer
BLUE ROCKET ELECTRONICS
Silicon NPN transistor
TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features ,。 High Voltage Capability High Speed Switching.  / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 1 23 PIN1: Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BUL123S Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Sy...
BUL128
manufacturer
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Cu...
BUL128
manufacturer
INCHANGE
NPN Transistor
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-peak tp<5ms 8 A IB Base Current-Continuous 2 A IBM Base Current-peak tp<5ms PC Collector Power Dissipati...
BUL128D
manufacturer
TGS
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting ABSOLUTE MAXIMUM RATINGS Parameter ol Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg Value Unit 700 V 400 V 9.0 V 4.0 A 2.0 A 70 W 150 ...
BUL128D
manufacturer
Inchange Semiconductor
Silicon NPN Power Transistor
·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-Peak (tp<5 ms) IB Base current IBM Base current-Peak (tp<5 ms) PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25℃ THERMAL CHARACTERISTICS SYMB...
BUL128D-B
manufacturer
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1: Order Codes Part Number BUL128D-B Marking BUL128D-B Figure 1: Package 3 2 1 TO-220 Figure 2: Internal Schematic Diagram Package TO-220 Packaging Tube Table 2: Absolute Maximum Rat...
BUL128DB
manufacturer
Inchange Semiconductor
Silicon NPN Power Transistor
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for electronic ballasts for fluorescent lighting. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-peak tp<5ms 8A IB Base Current-Continuous 2A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYM...




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