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STBV45 BLUE ROCKET ELECTRONICS Silicon NPN transistor Datasheet

STBV45-AP TRANS NPN 400V 0.75A TO92AP


BLUE ROCKET ELECTRONICS
STBV45
Part Number STBV45
Manufacturer BLUE ROCKET ELECTRONICS
Description TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features ,,。  High voltage capability,Low spread of dynamic parameters,Very high switching speed. / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. /...
Features ,,。  High voltage capability,Low spread of dynamic parameters,Very high switching speed. / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 STBV45 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Peak ...

Document Datasheet STBV45 datasheet pdf (779.36KB)
Distributor Distributor
DigiKey
Stock 3925 In Stock
Price
50000 units: 0.145 USD
10000 units: 0.15231 USD
6000 units: 0.16402 USD
2000 units: 0.17281 USD
BuyNow BuyNow BuyNow (Manufacturer a STMicroelectronics)




STBV45 Distributor

STMicroelectronics
STBV45-AP
TRANS NPN 400V 0.75A TO92AP
50000 units: 0.145 USD
10000 units: 0.15231 USD
6000 units: 0.16402 USD
2000 units: 0.17281 USD
Distributor
DigiKey

3925 In Stock
BuyNow BuyNow





STBV45 Similar Datasheet

Part Number Description
STBV32
manufacturer
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TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features ,,。  High voltage capability,Low spread of dynamic parameters,Very high switching speed. / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 STBV32 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Peak ...
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The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV32G-AP are supplied using halogen-free molding compound. TO-92 TO-92AP Figure 1. Internal schematic diagram Table 1. Device summary Order codes STBV32 STBV32G STBV32-AP STBV32G-AP Marking BV32 BV32G BV32 BV32G Package TO-92 TO-92 TO-92AP TO-92AP July 2008 Rev 8 Packaging Bulk Bulk Ammopack Ammopack 1/11 www.st.com 11 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum rating Symbol Par...
STBV42
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STBV42D
manufacturer
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TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features ,,。  High voltage capability,Low spread of dynamic parameters,Very high switching speed.  / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 STBV42D Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Peak Collecto...
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The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Figure 1. Internal schematic diagram Table 1. Device summary Marking BV42D Package TO-92 Packaging BAG Order code STBV42D March 2010 Doc ID 17236 Rev 1 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Electrical ratings STBV42D 1 Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM PTO...
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ST Microelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
bsThe device is manufactured using high voltage Omulti epitaxial planar technology for high switching -speeds and high voltage capability. It uses a )cellular emitter structure with planar edge t(stermination to enhance switching speeds while cmaintaining the wide RBSOA. uThe STBV45G and STBV45G-AP are supplied Obsolete Produsing halogen-free molding compound. TO-92 TO-92AP Figure 1. Internal schematic diagram Table 1. Device summary Order codes STBV45 STBV45G STBV45-AP STBV45G-AP Marking BV45 BV45G BV45 BV45G Package TO-92 TO-92 TO-92AP TO-92AP Packaging Bulk Bulk Ammopack Ammopack October 2008 Rev 6 1/10 www.st.com 10 Electrical ratings 1 Electrical ratin...
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manufacturer
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TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features ,,。  High voltage capability,Low spread of dynamic parameters,Very high switching speed. / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 STBV45D Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Pea...
STBV68
manufacturer
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The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV68 is designed for use in compact fluorescent lamp application. TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o ...




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