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BC178C CDIL PNP SILICON PLANAR EPITAXIAL TRANSISTORS Datasheet

BC178C


CDIL
BC178C
Part Number BC178C
Manufacturer CDIL
Description Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 degC Derate Above 25 deg C Power Dissipation@ Tc=25 degC Derate Above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE...
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Document Datasheet BC178C datasheet pdf (87.46KB)
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Bristol Electronics
Stock 5954 In Stock
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BC178C Distributor

part
Siemens
BC178C
No price available
Distributor
Bristol Electronics

5954 In Stock
No Longer Stocked





BC178C Similar Datasheet

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BC174 BC171 BC172 CASE 29-02, STYLE 17 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON Refer to BC546 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd Tj, T s tg Symbol Rwc Rfljc BC BC BC 174 171 172 65 45 25 80 50 30 6.0 100 350 2.8 1.0 8.0 -55 to +150 Max 125 357 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt ...
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Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ Ta=25ºC Derate Above 25ºC Total Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC174 BC171 65 80 45 50 6 100 350 2.8 1.0 8.0 -55 to +150 BC172 25 30 UNIT V V V mA mW mW/ºC W mW/ºC ºC Rth(j-a) Rth(j-c) 357 125 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Breakdown Voltage BC174 BC171 BC172 Emitter Base Breakdown Voltage ALL Collector Cut o...
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Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ Ta=25ºC Derate Above 25ºC Total Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC174 BC171 65 80 45 50 6 100 350 2.8 1.0 8.0 -55 to +150 BC172 25 30 UNIT V V V mA mW mW/ºC W mW/ºC ºC Rth(j-a) Rth(j-c) 357 125 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Breakdown Voltage BC174 BC171 BC172 Emitter Base Breakdown Voltage ALL Collector Cut o...
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Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ Ta=25ºC Derate Above 25ºC Total Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC174 BC171 65 80 45 50 6 100 350 2.8 1.0 8.0 -55 to +150 BC172 25 30 UNIT V V V mA mW mW/ºC W mW/ºC ºC Rth(j-a) Rth(j-c) 357 125 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Breakdown Voltage BC174 BC171 BC172 Emitter Base Breakdown Voltage ALL Collector Cut o...
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