logo

2N6303 Seme LAB Bipolar PNP Device Datasheet

2N6303 Bipolar Transistors - BJT Power BJT


Seme LAB
2N6303
Part Number 2N6303
Manufacturer Seme LAB
Description 2N6303 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO20...
Features ...

Document Datasheet 2N6303 datasheet pdf (10.13KB)
Distributor Distributor
Mouser Electronics
Stock 0 In Stock
Price
100 units: 153.28 USD
BuyNow (No Longer Stocked Microchip Technology Inc)




2N6303 Distributor

part
Microchip Technology Inc
2N6303
POWER BJT
100 units: 205294.77 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N6303
Bipolar Transistors - BJT Power BJT
100 units: 153.28 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
Microchip Technology Inc
2N6303
Power BJT _ TO-5, Projected EOL: 2049-02-05
1 units: 153.28 USD
Distributor
Microchip Technology Inc

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N6303
100 units: 138.76 USD
75 units: 141.59 USD
50 units: 208.01 USD
25 units: 407.27 USD
Distributor
Onlinecomponents.com

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N6303
100 units: 152.06 USD
Distributor
Future Electronics

0 In Stock
BuyNow BuyNow
part
Central Semiconductor Corp
2N6303
Bipolar Junction Transistor, PNP Type, TO-5
1 units: 18.759 USD
Distributor
Quest Components

3 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N6303
Transistor BJT PNP 80V 10A 3-Pin TO-254 - Bulk (Alt: 2N6303)
500 units: 136.85 USD
100 units: 142.32 USD
1 units: 153.28 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
Motorola Semiconductor Products
2N6303
MOT 2N6303 UNINSPECTED BARE DIE
No price available
Distributor
ES Components

59 In Stock
No Longer Stocked
part
Microchip Technology Inc
2N6303
100 units: 138.76 USD
75 units: 141.59 USD
50 units: 208.01 USD
25 units: 407.27 USD
Distributor
Master Electronics

0 In Stock
BuyNow BuyNow





2N6303 Similar Datasheet

Part Number Description
2N6300
manufacturer
VPT
NPN Darlington Power Silicon Transistor
2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 • TO-66 (TO-213AA) Package • Designed for High Gain Amplifier and Medium Speed Switching Applications Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc; 2N6300 IC = 100 mA dc; 2N6301 VCE = 30 V dc; 2N6300 VCE = 40 V dc; 2N6301 VCE = 60 V dc; VBE = -1.5 V dc; 2N6300 VCE = 80 V dc; VBE = -1.5 V dc; 2N6301 VEB = 5 V dc V(BR)CEO V dc ICEO mA dc ICEX1 ...
2N6300
manufacturer
Central Semiconductor
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 60 2N6299 2N6301 80 60 80 5.0 8.0 16 120 75 -65 to +200 2.33 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwis...
2N6300
manufacturer
Microsemi
PNP DARLINGTON POWER SILICON TRANSISTOR
TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C (1) @ TC = 1000C VCEO VCBO VEBO IB IC PT Operating & Storage Junction Temperature Range TJ, Tstg 1) Derate linearly 0.428 W/0C above TC > 00C 2N6300 2N6301 60 80 60 80 5.0 120 8.0 75 32 -55 to +200 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc 2N6300 2N6301 V(BR)CEO...
2N6300
manufacturer
Savantic
Silicon NPN Power Transistors
·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage 2N6300 2N6301 VCEO Collector-emitter voltage 2N6300 2N6301 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PA...
2N6300
manufacturer
Seme LAB
DARLINGTON SILICON POWER TRANSISTORS
2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • High DC Current Gain • Monolithic Construction with Built-in Base–Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collec...
2N6301
manufacturer
VPT
NPN Darlington Power Silicon Transistor
2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 • TO-66 (TO-213AA) Package • Designed for High Gain Amplifier and Medium Speed Switching Applications Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc; 2N6300 IC = 100 mA dc; 2N6301 VCE = 30 V dc; 2N6300 VCE = 40 V dc; 2N6301 VCE = 60 V dc; VBE = -1.5 V dc; 2N6300 VCE = 80 V dc; VBE = -1.5 V dc; 2N6301 VEB = 5 V dc V(BR)CEO V dc ICEO mA dc ICEX1 ...
2N6301
manufacturer
Central Semiconductor
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 60 2N6299 2N6301 80 60 80 5.0 8.0 16 120 75 -65 to +200 2.33 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwis...
2N6301
manufacturer
Microsemi
PNP DARLINGTON POWER SILICON TRANSISTOR
TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C (1) @ TC = 1000C VCEO VCBO VEBO IB IC PT Operating & Storage Junction Temperature Range TJ, Tstg 1) Derate linearly 0.428 W/0C above TC > 00C 2N6300 2N6301 60 80 60 80 5.0 120 8.0 75 32 -55 to +200 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc 2N6300 2N6301 V(BR)CEO...
2N6301
manufacturer
Savantic
Silicon NPN Power Transistors
·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage 2N6300 2N6301 VCEO Collector-emitter voltage 2N6300 2N6301 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PA...
2N6301
manufacturer
Seme LAB
DARLINGTON SILICON POWER TRANSISTORS
2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • High DC Current Gain • Monolithic Construction with Built-in Base–Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collec...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy