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2N3013 Motorola NPN SIlicon Small-Signal Transistor Datasheet

2N3013 Bipolar Transistors - BJT Small-Signal BJT


Motorola
2N3013
Part Number 2N3013
Manufacturer Motorola
Description ...
Features ...

Document Datasheet 2N3013 datasheet pdf (68.78KB)
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Mouser Electronics
Stock 0 In Stock
Price
100 units: 29.78 USD
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2N3013 Distributor

part
onsemi
2N3013
트랜지스터 - 양극(BJT) - 단일 NPN 15V 200mA 350MHz 360mW 스루홀 TO-18
No price available
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DigiKey

0 In Stock
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Microchip Technology Inc
2N3013
Bipolar Transistors - BJT Small-Signal BJT
100 units: 29.78 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
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Microchip Technology Inc
2N3013
Small-Signal BJT _ TO-18, Projected EOL: 2049-02-05
1 units: 29.78 USD
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Microchip Technology Inc

0 In Stock
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Microchip Technology Inc
2N3013
100 units: 26.4 USD
75 units: 26.94 USD
50 units: 34.03 USD
25 units: 55.3 USD
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Onlinecomponents.com

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Microchip Technology Inc
2N3013
100 units: 29.55 USD
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Future Electronics

0 In Stock
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part
nVent Hoffman
A42N3013
Enclosure 42.00x30.00x13.25 Gray, 42.00x30.00x13.25, Steel | nVent HOFFMAN A42N3013
1 units: 1567.04 USD
Distributor
RS

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Motorola Semiconductor Products
2N3013
Bipolar Junction Transistor, NPN Type, TO-52
17 units: 0.7875 USD
4 units: 1.26 USD
1 units: 1.575 USD
Distributor
Quest Components

16 In Stock
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part
Microchip Technology Inc
2N3013
Transistor BJT NPN 15V 0.2A 3-Pin TO-18 - Bulk (Alt: 2N3013)
500 units: 26.58 USD
100 units: 27.65 USD
1 units: 29.78 USD
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Avnet Americas

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New Jersey Semiconductor Products, Inc.
2N3013
994 units: 0.7128 USD
372 units: 0.756 USD
113 units: 0.81 USD
32 units: 1.35 USD
11 units: 1.62 USD
3 units: 2.16 USD
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Bristol Electronics

10518 In Stock
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Texas Instruments
2N3013
TI 2N3013 UNINSPECTED BARE DIE
No price available
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ES Components

95 In Stock
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2N3013 Similar Datasheet

Part Number Description
2N3001
manufacturer
Digitron Semiconductors
SILICON REVERSE BLOCKING THYRISTORS
2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature...
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SILICON REVERSE BLOCKING THYRISTORS
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manufacturer
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SILICON REVERSE BLOCKING THYRISTORS
2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature...
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manufacturer
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SILICON REVERSE BLOCKING THYRISTORS
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manufacturer
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2N3009
manufacturer
Motorola
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2N3010
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The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (tp=10μs) Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC 30 30 12 5.0 200 500 360 1.2 -65 to +200 486 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES ...
2N3011
manufacturer
Seme LAB
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2N3011 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 12V IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ (VCE / IC) * Maximum Working Voltage Min. Typ. 400M Max. 12 0.2 0.36 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact [email protected]. Se...




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