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BC237B CDIL NPN Silicon Transistor Datasheet

BC237B PBFREE TRANS NPN 50V 0.1A TO92


CDIL
BC237B
Part Number BC237B
Manufacturer CDIL
Description SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg ...
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Document Datasheet BC237B datasheet pdf (349.78KB)
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DigiKey
Stock 0 In Stock
Price
4000 units: 0.23748 USD
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BC237B Distributor

SPC Multicomp
BC237B
TRANSISTOR, NPN, TO-92
500 units: 62 KRW
100 units: 74 KRW
10 units: 87 KRW
5 units: 89 KRW
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element14 Asia-Pacific

15855 In Stock
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Central Semiconductor Corp
BC237B PBFREE
TRANS NPN 50V 0.1A TO92
4000 units: 0.23748 USD
Distributor
DigiKey

0 In Stock
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Central Semiconductor Corp
BC237B TRE PBFREE
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
1 units: 0.63 USD
10 units: 0.55 USD
100 units: 0.375 USD
500 units: 0.314 USD
1000 units: 0.267 USD
2000 units: 0.253 USD
4000 units: 0.214 USD
24000 units: 0.208 USD
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Mouser Electronics

3883 In Stock
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part
Fairchild Semiconductor Corporation
BC237B
Small Signal Bipolar Transistor, 0.1A, 45V, NPN, TO-92 '
1000 units: 0.0387 USD
500 units: 0.041 USD
100 units: 0.0428 USD
25 units: 0.0446 USD
1 units: 0.0455 USD
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Rochester Electronics

8938 In Stock
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Motorola Semiconductor Products
BC237B
Bipolar Junction Transistor, NPN Type, TO-92
266 units: 0.126 USD
31 units: 0.189 USD
1 units: 0.42 USD
Distributor
Quest Components

735 In Stock
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part
onsemi
BC237B
NPN SILICON AMPLIFIER TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
No price available
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ComSIT Asia

4757 In Stock
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Philips Semiconductors
BC237B
INSTOCK
No price available
Distributor
Chip 1 Exchange

888 In Stock
No Longer Stocked
part
Central Semiconductor Corp
BC237B
Bipolar Transistor NPN Amplifier/Switch 100mA 45V 3-Pin TO-92-18R Through Hole Box - Boxed Product (Development Kits) (Alt: BC237B)
No price available
Distributor
Avnet Americas

0 In Stock
No Longer Stocked
part
onsemi
BC237BG
No price available
Distributor
Bristol Electronics

13159 In Stock
No Longer Stocked
part
onsemi
BC237BZL1
IN STOCK SHIP TODAY
1000 units: 0.1 USD
100 units: 0.12 USD
1 units: 0.15 USD
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Component Electronics, Inc

1925 In Stock
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BC237B Similar Datasheet

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SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 - 55 to +150 THERMAL RESISTANCE Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 357 125 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 BC237 Emitter Base Voltage VEBO BC238/BC239 IE=10µA,...
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC237/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC237,A,B,C BC238B,C BC239,C MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC 237 45 50 6.0 BC 238 25 30 5.0 100 350 2.8 1.0 8.0 – 55 to +150 BC 239 25 30 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS C...
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www.DataSheet4U.com BC237, BC237B, BC237C, BC239C Amplifier Transistors NPN Silicon Features http://onsemi.com COLLECTOR 1 2 BASE Symbol VCEO BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector −Emitter Voltage BC237 BC239 Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Temperature Range IC PD PD TJ, Tstg VEBO 6.0 5.0 100 350 2.8 1.0 8.0 −55 to +150 mAdc mW mW/°C W mW/°C °C 12 3 VCES 50 30 Vdc TO−92 CASE 29 STYLE 17 45 25 Vdc Value Unit Vdc 3 EMITTER • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage MARKING DIAGRAM BC23 xy AY...
BC237
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Philipss
NPN Transistor
NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC307; BC307B. PINNING PIN 1 2 3 emitter base collector BC237; BC237B DESCRIPTION 1 handbook, halfpage 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain BC237 BC237B fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V 120 200 100 460 460 − MHz open emitter open base CONDITIONS − − − − MIN. MAX. 50 45 200 500 V V mA mW UNIT 1997 Sep 04 2 Philips Semiconductors Product specification NPN...
BC237
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NPN EPITAXIAL SILICON TRANSISTOR
BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239 Emitter-Base Voltage : BC237 : BC238/239 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES 50 30 VCEO 45 25 VEBO 6 5 100 500 150 -55 ~ 150 V V mA mW °C °C 1. Collector 2. Base 3. Emitter V V Rating Unit V V IC PC TJ T STG ELECTRICAL CHARACTERISTICS (TA=25° C) Characteristic Collector-Emitter Breakdown Voltage :BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 Collector Cut-...
BC237
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Micro Electronics
NPN Silicon Transistor
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BC237
manufacturer
SEMTECH
NPN Silicon Transistor
BC237...BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Symbol BC237 BC238 BC239 VCBO VCEO VEBO IC Ptot 50 45 6 30 30 25 25 5 100 500 Tj 150 TS - 55 to + 150 Unit V V V mA mW OC OC Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 2 mA Current Gain Group A B C Col...
BC237
manufacturer
KEC
EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). For Complementary With PNP type BC307/308/309. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC BC237 Collector-Base Voltage BC238 BC239 BC237 Collector-Emitter Voltage BC238 BC239 BC237 Emitter-Base Voltage BC238 BC239 BC237 Collector Current BC238 BC239 BC237 Emitter Current BC238 BC239 Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 50 30 30 45 20 20 6 5 5 100 100 50 -100 -50 -50 625 150 -55 150 UNIT...
BC237A
manufacturer
CDIL
NPN Silicon Transistor
SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 - 55 to +150 THERMAL RESISTANCE Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 357 125 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 BC237 Emitter Base Voltage VEBO BC238/BC239 IE=10µA,...




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