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EMB60B03G Excelliance MOS MOSFET Datasheet


Excelliance MOS
EMB60B03G
Part Number EMB60B03G
Manufacturer Excelliance MOS
Description Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 60mΩ ID ‐5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain...
Features age Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = ‐24V, VGS = 0V VDS = ‐20V, VGS = 0V, TJ = 125 °C VDS = ‐5V, VGS = ‐10V VGS = ‐10V, ID = ‐5A VGS = ‐4.5V, ID = ‐4A VDS = ‐5V, ID = ‐5A DYNAMIC ‐30 V ‐1 ‐1.5 ‐3 ±100 nA ‐1 A ‐10 ‐5 A 48 60 mΩ 68 90 16 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge1,2 Gate‐Source Charge...

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