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EMB70A08G Excelliance MOS MOSFET Datasheet


Excelliance MOS
EMB70A08G
Part Number EMB70A08G
Manufacturer Excelliance MOS
Description Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V RDSON (MAX.) 65mΩ ID 5A UIS, 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage C...
Features ISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 64V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V VGS = 10V, ID = 5A VGS = 5V, ID = 3A VDS = 5V, ID = 5A DYNAMIC 80 V 1.0 1.7 3.0 ±100 nA 1 A 25 5 A 55...

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