logo

EMB60N06C Excelliance MOS MOSFET Datasheet


Excelliance MOS
EMB60N06C
Part Number EMB60N06C
Manufacturer Excelliance MOS
Description ...
Features ...

Document Datasheet EMB60N06C datasheet pdf (189.98KB)




EMB60N06C Distributor






EMB60N06C Similar Datasheet

Part Number Description
EMB60N06A
manufacturer
Excelliance MOS
MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 12A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=12A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐t...
EMB60N06CS
manufacturer
Excelliance MOS
MOSFET
...
EMB60N06H
manufacturer
Excelliance MOS
MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 58mΩ ID 15A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=12A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐t...
EMB60N06J
manufacturer
Excelliance MOS
MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 3.5A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% TYPICAL EMB60N06J LIMITS ±20 3.5 2.3 14 1.25 0.83 ...
EMB60N06V
manufacturer
Excelliance MOS
MOSFET
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  60V  D RDSON (MAX.)  60mΩ  ID  8A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source Voltage  Continuous Drain Current  Pulsed Drain Current1  TA = 25 °C  TA = 100 °C  Avalanche Current  Avalanche Energy  Repetitive Avalanche Energy2  L = 0.1mH, ID=6A, RG=25Ω  L = 0.05mH  Power Dissipation  TA = 25 °C  TA = 100 °C  Operating Junction & Storage Temperature Range  VGS  ID  IDM  IAS  EAS  EAR  PD  Tj, Tstg  EMB60N06V LIMITS  ±20  8  6  32  6  1.8  0.9  ...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy