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EMB60N10A Excelliance MOS MOSFET Datasheet


Excelliance MOS
EMB60N10A
Part Number EMB60N10A
Manufacturer Excelliance MOS
Description     N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  60mΩ  ID  23A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  ...
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EMB60N10A Similar Datasheet

Part Number Description
EMB60N10G
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 60mΩ ID 6A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=10A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐t...




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