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P5003QVG UNIKC N&P-Channel MOSFET Datasheet


UNIKC
P5003QVG
Part Number P5003QVG
Manufacturer UNIKC
Description P5003QVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS = 10V -30V 45mΩ @VGS = -10V ID Channel 10A N -7A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS ...
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NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5003QVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel 30 P-Channel -30 RDS(ON) 27.5m 45m ID 7A -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C VDS VGS ID IDM PD Tj, Tstg N-Channel P-Channel UNITS 30 -30 V ±20 ±20 V 7 -5 6 -4 A 20 -20 2 W 1.3 -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RθJA 1P...
P5003QVT
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P5003QVT N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS =10V -30V 45mΩ @VGS = -10V ID Channel 10A N -7A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70°C N 10 P -7 ID N 7 P -5 Pulsed Drain Current1 N 20 IDM P -20 Power Dissipation TA = 25 °C TA = 70 °C N 2.5 P PD N 1.6 P Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W °C REV 1.0 1 2014/9/30 P5003QVT N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESIS...




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