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FDV303N Fairchild Semiconductor N-Channel Digital FET Datasheet

FDV303N N채널 25V 680mA(Ta) 350mW(Ta) 표면 실장 SOT-23-3


Fairchild Semiconductor
FDV303N
Part Number FDV303N
Manufacturer Fairchild Semiconductor
Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in bat...
Features 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model Compact industry standard SOT-23 surface mount pa...

Document Datasheet FDV303N datasheet pdf (149.41KB)
Distributor Distributor
DigiKey
Stock 631 In Stock
Price
1000 units: 123.981 KRW
500 units: 167.096 KRW
100 units: 204.83 KRW
10 units: 405.3 KRW
1 units: 577 KRW
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FDV303N Distributor

part
onsemi
FDV303N
MOSFET, N,25V, 680MA, SOT-23
500 units: 229 KRW
Distributor
element14 Asia-Pacific

277702 In Stock
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part
onsemi
FDV303N
N채널 25V 680mA(Ta) 350mW(Ta) 표면 실장 SOT-23-3
1000 units: 123.981 KRW
500 units: 167.096 KRW
100 units: 204.83 KRW
10 units: 405.3 KRW
1 units: 577 KRW
Distributor
DigiKey

631 In Stock
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part
onsemi
FDV303N
Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount (Alt: FDV303N)
750000 units: 0.04436 USD
375000 units: 0.04543 USD
150000 units: 0.04655 USD
75000 units: 0.04773 USD
45000 units: 0.04834 USD
30000 units: 0.04897 USD
15000 units: 0.04962 USD
Distributor
Avnet Asia

0 In Stock
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part
onsemi
FDV303N
MOSFETs N-Ch Digital
1 units: 0.4 USD
10 units: 0.281 USD
100 units: 0.116 USD
1000 units: 0.085 USD
3000 units: 0.069 USD
9000 units: 0.059 USD
24000 units: 0.056 USD
45000 units: 0.048 USD
99000 units: 0.047 USD
Distributor
Mouser Electronics

49537 In Stock
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part
onsemi
FDV303N
Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R
99000 units: 0.0598 USD
45000 units: 0.0707 USD
9000 units: 0.074 USD
3000 units: 0.0816 USD
1000 units: 0.0935 USD
100 units: 0.1284 USD
10 units: 0.3056 USD
1 units: 0.4351 USD
Distributor
Arrow Electronics

3188 In Stock
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part
onsemi
FDV303N
Transistor, digital FET, N-channel, MOSFET, 25V, 0.68A, 0.35W, SOT-23 | ON Semiconductor FDV303N
100 units: 0.062 USD
200 units: 0.059 USD
Distributor
RS

0 In Stock
No Longer Stocked
part
onsemi
FDV303N
Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R
45000 units: 0.0522 USD
30000 units: 0.0554 USD
15000 units: 0.0595 USD
3000 units: 0.0651 USD
Distributor
Verical

60000 In Stock
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part
onsemi
FDV303N
N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3
45000 units: 0.0441 USD
30000 units: 0.0456 USD
12000 units: 0.0471 USD
9000 units: 0.0476 USD
3000 units: 0.0495 USD
Distributor
Future Electronics

93000 In Stock
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part
onsemi
FDV303N
MOSFET Transistor, N-Channel, TO-236AB
3231 units: 0.0447 USD
582 units: 0.0619 USD
1 units: 0.1376 USD
Distributor
Quest Components

9526 In Stock
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part
onsemi
FDV303N
Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
9000 units: 0.0635 USD
3000 units: 0.0657 USD
2500 units: 0.0667 USD
1000 units: 0.0777 USD
100 units: 0.1401 USD
50 units: 0.1729 USD
10 units: 0.2757 USD
1 units: 0.3841 USD
Distributor
TME

3348 In Stock
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FDV303N Similar Datasheet

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This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. June 2009 Features 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1...
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FDV303N
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FDV304P
manufacturer
Fairchild Semiconductor
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This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Features -25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ...




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