logo

IPP65R190C7 Infineon MOSFET Datasheet

IPP65R190C7FKSA1 MOSFETs Y


Infineon
IPP65R190C7
Part Number IPP65R190C7
Manufacturer Infineon (https://www.infineon.com/)
Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio provide...
Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-S...

Document Datasheet IPP65R190C7 datasheet pdf (1.37MB)
Distributor Distributor
Mouser Electronics
Stock 1010 In Stock
Price
1 units: 2.32 USD
10 units: 2.21 USD
25 units: 1.92 USD
100 units: 1.79 USD
500 units: 1.59 USD
1000 units: 1.33 USD
2500 units: 1.26 USD
5000 units: 1.21 USD
BuyNow BuyNow BuyNow (Manufacturer a Infineon Technologies AG)




IPP65R190C7 Distributor

part
Infineon Technologies AG
IPP65R190C7FKSA1
MOSFET, N-CH, 650V, 13A, TO-220-3
1000 units: 2037 KRW
500 units: 2216 KRW
100 units: 2629 KRW
10 units: 3125 KRW
1 units: 3937 KRW
Distributor
element14 Asia-Pacific

648 In Stock
BuyNow BuyNow
part
Infineon Technologies AG
IPP65R190C7FKSA1
N채널 650V 13A(Tc) 72W(Tc) 스루홀 PG-TO220-3
5000 units: 1749.4052 KRW
2000 units: 1817.741 KRW
1000 units: 1913.406 KRW
500 units: 2255.086 KRW
100 units: 2665.13 KRW
50 units: 3239.24 KRW
1 units: 4039 KRW
Distributor
DigiKey

432 In Stock
BuyNow BuyNow
part
Infineon Technologies AG
IPP65R190C7FKSA1
MOSFETs Y
1 units: 2.32 USD
10 units: 2.21 USD
25 units: 1.92 USD
100 units: 1.79 USD
500 units: 1.59 USD
1000 units: 1.33 USD
2500 units: 1.26 USD
5000 units: 1.21 USD
Distributor
Mouser Electronics

1010 In Stock
BuyNow BuyNow
part
Infineon Technologies AG
IPP65R190C7FKSA1
MOSFET N-Channel 650V 13A CoolMOS, TU
12 units: 23.833 HKD
Distributor
RS

500 In Stock
BuyNow BuyNow
part
Infineon Technologies AG
IPP65R190C7FKSA1
MOSFET
1 units: 1.33 USD
Distributor
Chip1Stop

500 In Stock
BuyNow BuyNow
part
Infineon Technologies AG
IPP65R190C7
Trans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube
500 units: 2.4625 USD
250 units: 2.5314 USD
100 units: 2.6106 USD
50 units: 2.7023 USD
27 units: 2.8093 USD
Distributor
Verical

500 In Stock
BuyNow BuyNow
part
Infineon Technologies AG
IPP65R190C7
291 units: 3.0756 USD
68 units: 3.4484 USD
1 units: 5.592 USD
Distributor
Quest Components

400 In Stock
BuyNow BuyNow
part
Infineon Technologies AG
IPP65R190C7FKSA1
Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO220-3
50 units: 2.59 USD
10 units: 2.97 USD
3 units: 3.45 USD
1 units: 3.83 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
Infineon Technologies AG
IPP65R190C7FKSA1
Trans MOSFET N-CH 700V 13A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R190C7FKSA1)
50 units: 1.30396 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
Infineon Technologies AG
IPP65R190C7FKSA1
Trans MOSFET N-CH 700V 13A 3-Pin TO-220 Tube (Alt: SP000929426)
No price available
Distributor
EBV Elektronik

0 In Stock
BuyNow BuyNow





IPP65R190C7 Similar Datasheet

Part Number Description
IPP65R190C6
manufacturer
Infineon Technologies
Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC ...
IPP65R190C6
manufacturer
INCHANGE
N-Channel MOSFET
·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.2 IDM Drain Current-Single Pulsed 66 PD Total Dissipation @TC=25℃ 151 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.83 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP65R1...
IPP65R190C7
manufacturer
INCHANGE
N-Channel MOSFET
·Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD Total Dissipation @TC=25℃ 72 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.73 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & isc...
IPP65R190CFD
manufacturer
Infineon Technologies
CFD2 Power Transistor
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
IPP65R190CFD
manufacturer
INCHANGE
N-Channel MOSFET
·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17.5 IDM Drain Current-Single Pulsed 57.2 PD Total Dissipation @TC=25℃ 151 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.83 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOS...
IPP65R190CFDA
manufacturer
Infineon Technologies
CFDA Power Transistor
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
IPP65R190E6
manufacturer
Infineon Technologies
Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC ...
IPP65R190E6
manufacturer
INCHANGE
N-Channel MOSFET
·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.2 IDM Drain Current-Single Pulsed 66 PD Total Dissipation @TC=25℃ 151 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.83 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP65R1...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy