logo

IPB65R190C7 Infineon MOSFET Datasheet

IPB65R190C7ATMA2 MOSFET N-CH 650V 13A TO263-3


Infineon
IPB65R190C7
Part Number IPB65R190C7
Manufacturer Infineon (https://www.infineon.com/)
Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio provide...
Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-S...

Document Datasheet IPB65R190C7 datasheet pdf (1.50MB)
Distributor Distributor
DigiKey
Stock 1615 In Stock
Price
1000 units: 1.17262 USD
500 units: 1.17262 USD
100 units: 1.2988 USD
10 units: 1.632 USD
1 units: 1.96 USD
BuyNow BuyNow BuyNow (Manufacturer a Infineon Technologies AG)




IPB65R190C7 Distributor

Infineon Technologies AG
IPB65R190C7ATMA2
MOSFET, N-CH, 650V, 13A, 150DEG C, 72W
1000 units: 1984 KRW
500 units: 2334 KRW
100 units: 2550 KRW
Distributor
element14 Asia-Pacific

894 In Stock
BuyNow BuyNow
Infineon Technologies AG
IPB65R190C7ATMA2
MOSFET N-CH 650V 13A TO263-3
1000 units: 1.17262 USD
500 units: 1.17262 USD
100 units: 1.2988 USD
10 units: 1.632 USD
1 units: 1.96 USD
Distributor
DigiKey

1615 In Stock
BuyNow BuyNow
Infineon Technologies AG
IPB65R190C7ATMA2
MOSFETs N
1 units: 1.96 USD
10 units: 1.64 USD
100 units: 1.3 USD
500 units: 1.18 USD
1000 units: 1.17 USD
Distributor
Mouser Electronics

311 In Stock
BuyNow BuyNow
Infineon Technologies AG
IPB65R190C7ATMA2
Infineon MOSFET IPB65R190C7ATMA2, PK
500 units: 22.79 HKD
250 units: 23.206 HKD
100 units: 23.63 HKD
10 units: 24.064 HKD
5 units: 24.506 HKD
Distributor
RS

1765 In Stock
BuyNow BuyNow
Infineon Technologies AG
IPB65R190C7ATMA2
MOSFET
1 units: 1.78 USD
10 units: 1.55 USD
50 units: 1.42 USD
100 units: 1.38 USD
200 units: 1.37 USD
500 units: 1.35 USD
Distributor
Chip1Stop

1000 In Stock
BuyNow BuyNow
Infineon Technologies AG
IPB65R190C7ATMA2
Trans MOSFET N-CH 650V 13A 3-Pin(2+Tab) D2PAK T/R
500 units: 1.6875 USD
200 units: 1.7125 USD
100 units: 1.725 USD
50 units: 1.775 USD
17 units: 1.9375 USD
Distributor
Verical

1000 In Stock
BuyNow BuyNow
Infineon Technologies AG
IPB65R190C7ATMA1
Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
100 units: 2.08 USD
10 units: 2.4 USD
3 units: 2.98 USD
1 units: 3.47 USD
Distributor
TME

0 In Stock
No Longer Stocked
Infineon Technologies AG
IPB65R190C7ATMA2
Transistor MOSFET N-CH 650V 13A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R190C7ATMA2)
No price available
Distributor
Avnet Americas

0 In Stock
No Longer Stocked
Infineon Technologies AG
IPB65R190C7ATMA2
Transistor MOSFET N-CH 650V 13A 3-Pin TO-263 T/R (Alt: SP002447550)
No price available
Distributor
EBV Elektronik

0 In Stock
BuyNow BuyNow
Infineon Technologies AG
IPB65R190C7ATMA2
32000 units: 1.48 USD
1000 units: 1.59 USD
Distributor
New Advantage Corporation

32000 In Stock
BuyNow BuyNow





IPB65R190C7 Similar Datasheet

Part Number Description
IPB65R190C6
manufacturer
Infineon Technologies
Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC ...
IPB65R190C6
manufacturer
INCHANGE
N-Channel MOSFET
Isc N-Channel MOSFET Transistor IPB65R190C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 20.2 12.8 66 PD Total Dissipation @TC=25℃ 151 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-...
IPB65R190C7
manufacturer
INCHANGE
N-Channel MOSFET
·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD Total Dissipation @TC=25℃ 72 Tj Max. Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.73 UNIT ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL...
IPB65R190CFD
manufacturer
Infineon Technologies
CFD2 Power Transistor
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
IPB65R190CFD
manufacturer
INCHANGE
N-Channel MOSFET
Isc N-Channel MOSFET Transistor IPB65R190CFD ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 17.5 11 57.2 PD Total Dissipation @TC=25℃ 151 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch...
IPB65R190CFDA
manufacturer
Infineon Technologies
CFDA Power Transistor
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
IPB65R190E6
manufacturer
Infineon Technologies
Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC ...
IPB65R190E6
manufacturer
INCHANGE
N-Channel MOSFET
Isc N-Channel MOSFET Transistor IPB65R190E6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 20.2 12.8 66 PD Total Dissipation @TC=25℃ 151 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy